SHD230452 Datasheet, PDF (1/3 Pages) Sensitron – HERMETIC POWER MOSFET P-CHANNEL

SENSITRON
SEMICONDUCTOR
SHD230452
TECHNICAL DATA
DATA SHEET 722, REV. -
HERMETIC POWER MOSFET
P-CHANNEL
FEATURES:
œ -100 Volt, 0.065 Ohm, -20A MOSFET
œ Fast Switching
œ Low R_{DS (on)}
œ Electrically Equivalent to IRF5210
MAXIMUM RATINGS
ALL RATINGS ARE AT T_C = 25•C UNLESS OTHERWISE SPECIFIED.
RATING
SYMBOL MIN. TYP. MAX.
UNITS
GATE TO SOURCE VOLTAGE
V_GS
-
-
–20
Volts
CONTINUOUS DRAIN CURRENT V_GS=-10V, T_C = 25•C
I_D
V_GS=-10V, T_C = 100•C
-
-
-20
Amps
-20
OPERATING AND STORAGE TEMPERATURE
T_OP/T_STG
-55
-
+150
•C
THERMAL RESISTANCE, JUNCTION TO CASE
R_thJC
-
-
1.3
•C/W
TOTAL DEVICE DISSIPATION @ T_C = 25•C
P_D
-
-
95
Watts
ELECTRICAL CHARACTERISTICS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
V_GS = 0V, I_D = -250mA
STATIC DRAIN TO SOURCE ON STATE RESISTANCE
V_GS = -10V, I_D = 0.6x rated I_D
GATE THRESHOLD VOLTAGE V_DS = V_GS, I_D = -250mA
FORWARD TRANSCONDUCTANCE
V_DS ˜ I_{D (ON)} X R_{DS (ON)} Max., I_DS = 0.6 X I_D
ZERO GATE VOLTAGE DRAIN CURRENT
BV_DSS
R_DS(ON)
V_GS(th)
g_fs
V_DS = Max. Rating, V_GS = 0V
I_DSS
V_DS = 0.8xMax. Rating, V_GS = 0V, T_J = 125•C
GATE TO SOURCE LEAKAGE FORWARD V_GS = 20V
I_GSS
GATE TO SOURCE LEAKAGE REVERSE V_GS = -20V
TOTAL GATE CHARGE
V_GS = -10 V,
Q_g
GATE TO SOURCE CHARGE
V_DS = -80 V,
Q_gs
GATE TO DRAIN CHARGE
I_D = .5 x rated I_D
Q_gd
TURN ON DELAY TIME
V_DD = -50V,
t_d(ON)
RISE TIME
I_D = .5xI_D,
t_r
TURN OFF DELAY TIME
FALL TIME
R_G = 2.5W
t_d(OFF)
t_f
DIODE FORWARD VOLTAGE
T_j = 25•C, I_S = .5xI_D,
V_SD
V_GS = 0V
REVERSE RECOVERY TIME
T_J = 25•C,
t_rr
I_f = I_D,
di_F/ds = 100A/msec,
Q_rr
INPUT CAPACITANCE
V_GS = 0 V
C_iss
OUTPUT CAPACITANCE
V_DS = -25 V
C_oss
REVERSE TRANSFER CAPACITANCE f = 1.0MHz
C_rss
Note: Continuous current ratings are limited by package.
-100
-
-
-
-2.0
-
10
-
-
-
-
-
-
-
-
17
86
79
81
-
-
-
170
1.2
-
2700
790
400
-
0.06
-4.0
-
-25
-250
100
-100
180
25
97
-
-1.6
260
1.8
-
Volts
W
Volts
S(1/W)
mA
nA
nC
nsec
Volts
nsec
mC
pF
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