SHD230302 Datasheet, PDF (1/3 Pages) Sensitron – HERMETIC POWER MOSFET N-CHANNEL

SENSITRON
SEMICONDUCTOR
SHD230302
TECHNICAL DATA
DATA SHEET 602, REV -
HERMETIC POWER MOSFET
N-CHANNEL
FEATURES:
œ 100 Volt, 0.18 Ohm, 7.4A MOSFET
œ Fast Switching
œ Low R_{DS (on)}
œ Equivalent to IRFE130
MAXIMUM RATINGS
ALL RATINGS ARE AT T_C = 25•C UNLESS OTHERWISE SPECIFIED.
RATING
SYMBOL MIN. TYP. MAX.
UNITS
GATE TO SOURCE VOLTAGE
V_GS
-
-
–20
Volts
ON-STATE DRAIN CURRENT
@ T_C = 25•C
I_D
-
-
10.8
Amps
ON-STATE DRAIN CURRENT
@ T_C = 100•C
I_D
-
-
6.8
Amps
OPERATING AND STORAGE TEMPERATURE
T_OP/T_STG
-55
-
+150
•C
TOTAL DEVICE DISSIPATION @ T_C = 25•C
P_D
-
-
42
Watts
THERMAL RESISTANCE, JUNCTION TO CASE
R_thJC
-
-
3.0
•C/W
ELECTRICAL CHARACTERISTICS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
V_GS = 0V, I_D = 1.0mA
STATIC DRAIN TO SOURCE ON STATE RESISTANCE
V_GS = 10V, I_D = 5.4A
GATE THRESHOLD VOLTAGE V_DS = V_GS, I_D = 250mA
FORWARD TRANSCONDUCTANCE
V_DS = 15V, I_DS = 6.8A
ZERO GATE VOLTAGE DRAIN CURRENT
V_DS = 0.8xMax. Max. Rating, V_GS = 0V
V_DS = 0.8xMax. Rating, V_GS = 0V, T_J = 125•C
GATE TO SOURCE LEAKAGE FORWARD V_GS = 20V
GATE TO SOURCE LEAKAGE REVERSE V_GS = -20V
TURN ON DELAY TIME
V_DD = 50V,
RISE TIME
I_D = 10.8A,
TURN OFF DELAY TIME
R_G = 7.5W
FALL TIME
TOTAL GATE CHARGE
GATE TO SOURCE CHARGE
GATE TO DRAIN CHARGE
I_D = 10.8A,
V_GS = 10V,
V_DS =0.5xMax. Rating
DIODE FORWARD VOLTAGE
T_C = 25•C, I_S = 10.8A,
V_GS = 0V
REVERSE RECOVERY CHARGE
T_J = 25•C,
di/dt ˆ 100A/msec, V_DD ˆ 50V
REVERSE RECOVERY TIME
T_J = 25•C,
I_F = 10.8A,
di/dt ˆ 100A/msec, V_DD ˆ 50V
INPUT CAPACITANCE
V_GS = 0 V
OUTPUT CAPACITANCE
V_DS = 25 V
REVERSE TRANSFER CAPACITANCE f = 1.0MHz
BV_DSS
R_DS(ON)
V_GS(th)
g_fs
I_DSS
I_GSS
t_d(ON)
t_r
t_d(OFF)
t_f
Q_g
Q_gs
Q_gd
V_SD
Q_RR
t_rr
C_iss
C_oss
C_rss
100
-
-
-
2.0
-
3.0
-
-
-
-
-
-
-
12.8
-
1.0
-
3.8
-
-
-
-
-
-
-
-
650
240
44
-
0.18
4.0
-
25
250
100
-100
30
75
40
45
28.5
6.3
16.6
1.5
3.0
300
-
Volts
W
Volts
S(1/W)
mA
nA
nsec
nC
nC
nC
Volts
mC
nsec
pF
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