SHD230209 Datasheet, PDF (1/3 Pages) Sensitron – HERMETIC POWER MOSFET P-CHANNEL QUAD

SENSITRON
SEMICONDUCTOR
SHD230209
TECHNICAL DATA
DATA SHEET 318, REV. A
HERMETIC POWER MOSFET
P-CHANNEL QUAD
FEATURES:
œ -100 Volt, 0.60 Ohm, -3.5A MOSFET
œ Fast Switching
œ Low R_{DS (on)}
œ Equivalent to IRF9120 Series
MAXIMUM RATINGS
ALL RATINGS ARE AT T_C = 25•C UNLESS OTHERWISE SPECIFIED.
RATING
SYMBOL MIN. TYP. MAX.
UNITS
GATE TO SOURCE VOLTAGE
V_GS
-
-
–20
Volts
ON-STATE DRAIN CURRENT
@ T_C = 100•C
I_D
-
-
-3.5
Amps
PULSED DRAIN CURRENT (10ms)
I_DM
-
-
-10
Amps
OPERATING AND STORAGE TEMPERATURE
T_OP/T_STG
-55
-
+150
•C
TOTAL DEVICE DISSIPATION @ T_C = 25•C
P_D
-
-
31
Watts
THERMAL RESISTANCE, JUNCTION TO CASE
R_thJC
-
-
4.0
•C/W
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
DRAIN TO SOURCE BREAKDOWN VOLTAGE
V_GS = 0V, I_D = -1.0mA
STATIC DRAIN TO SOURCE ON STATE RESISTANCE
V_GS = -10V, I_D = 2.2A
GATE THRESHOLD VOLTAGE V_DS = V_GS, I_D = -250mA
FORWARD TRANSCONDUCTANCE
V_DS ˜ 15V, I_DS = -2.2A
ZERO GATE VOLTAGE DRAIN CURRENT
V_DS = 0.8xMax. Rating, V_GS = 0V
V_DS = 0.8xMax. Rating, V_GS = 0V, T_J = 125•C
GATE TO SOURCE LEAKAGE FORWARD V_GS = 20V
GATE TO SOURCE LEAKAGE REVERSE V_GS = -20V
TURN ON DELAY TIME
V_DD = -50V,
RISE TIME
I_D = -3.5A,
TURN OFF DELAY TIME
R_G = 7.5W,
FALL TIME
V_GS = 10V
DIODE FORWARD VOLTAGE
T_C = 25•C, I_S = -3.5A,
V_GS = 0V
REVERSE RECOVERY TIME
T_J = 25•C,
I_f = -3.5A,
V_DD ˆ -50 _diF/ds = 100A/msec
INPUT CAPACITANCE
V_GS = 0 V
OUTPUT CAPACITANCE
V_DS = -25 V
REVERSE TRANSFER CAPACITANCE f = 1.0MHz
SYMBOL
BV_DSS
R_DS(ON)
V_GS(th)
g_fs
I_DSS
I_GSS
t_d(ON)
t_r
t_d(OFF)
t_f
V_SD
t_rr
C_iss
C_oss
C_rss
MIN.
-100
-
-2.0
1.25
-
-
-
-
-
-
TYP.
-
-
-
-
-
-
-
-
-
380
170
45
MAX.
-
0.60
4.0
-
-25
-250
100
-100
60
100
50
70
-4.8
200
-
UNITS
Volts
W
Volts
S(1/W)
mA
nA
nsec
Volts
nsec
pF
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