SHD230202 Datasheet, PDF (1/3 Pages) Sensitron – HERMETIC POWER MOSFET N-CHANNEL QUAD

SENSITRON
SEMICONDUCTOR
SHD230202
TECHNICAL DATA
DATA SHEET 319, REV. A
HERMETIC POWER MOSFET
N-CHANNEL QUAD
FEATURES:
œ 100 Volt, 0.35 Ohm, 6.2A MOSFET
œ Fast Switching
œ Low R_{DS (on)}
œ Equivalent to IRF120 Series
MAXIMUM RATINGS
ALL RATINGS ARE AT T_C = 25•C UNLESS OTHERWISE SPECIFIED.
RATING
SYMBOL MIN. TYP. MAX.
UNITS
GATE TO SOURCE VOLTAGE
V_GS
-
-
–20
Volts
ON-STATE DRAIN CURRENT @ T_C = 25•C
I_D
-
-
6.2
Amps
PULSED DRAIN CURRENT (10ms)
I_DM
-
-
12
Amps
OPERATING AND STORAGE TEMPERATURE
T_OP/T_STG
-55
-
+150
•C
TOTAL DEVICE DISSIPATION @ T_C = 25•C
P_D
-
-
27
Watts
THERMAL RESISTANCE, JUNCTION TO CASE
R_thJC
-
-
4.7
•C/W
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
DRAIN TO SOURCE BREAKDOWN VOLTAGE
V_GS = 0V, I_D = 250mA
STATIC DRAIN TO SOURCE ON STATE RESISTANCE
V_GS = 10V, I_D = 0.6x rated I_D
GATE THRESHOLD VOLTAGE V_DS = V_GS, I_D = 250mA
FORWARD TRANSCONDUCTANCE
V_DS ˜ I_{D (ON)} X R_{DS (ON)} Max., I_DS = 0.6 X I_D
ZERO GATE VOLTAGE DRAIN CURRENT
V_DS = Max. Rating, V_GS = 0V
V_DS = 0.8xMax. Rating, V_GS = 0V, T_J = 125•C
GATE TO SOURCE LEAKAGE FORWARD V_GS = 20V
GATE TO SOURCE LEAKAGE REVERSE V_GS = -20V
TURN ON DELAY TIME
V_DD = 50V,
RISE TIME
I_D = .5xI_D,
TURN OFF DELAY TIME
R_G = 18W,
FALL TIME
V_GS = 10V
DIODE FORWARD VOLTAGE
T_C = 25•C, I_S = I_D,
V_GS = 0V
REVERSE RECOVERY TIME
T_J = 25•C,
I_f = I_D,
di_F/ds = 100A/msec,
INPUT CAPACITANCE
V_GS = 0 V
OUTPUT CAPACITANCE
V_DS = 25 V
REVERSE TRANSFER CAPACITANCE f = 1.0MHz
SYMBOL
BV_DSS
R_DS(ON)
V_GS(th)
g_fs
I_DSS
I_GSS
t_d(ON)
t_r
t_d(OFF)
t_f
V_SD
t_rr
C_iss
C_oss
C_rss
MIN.
100
-
2.0
2.7
-
-
-
-
55
-
TYP.
-
-
-
4.1
-
-
8.8
30
19
20
-
110
350
130
36
MAX.
-
0.35
4.0
-
250
1000
100
-100
13
45
29
30
2.5
240
-
UNITS
Volts
W
Volts
S(1/W)
mA
nA
nsec
Volts
nsec
pF
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