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| SHD226707 Datasheet, PDF (1/2 Pages) Sensitron – HERMETIC POWER MOSFET N-CHANNEL | |||
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SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 4307, REV -
HERMETIC POWER MOSFET
N-CHANNEL
FEATURES:
⢠100 Volt, 0.035 Ohm MOSFET
⢠Hermetically Sealed
⢠TO-257 Hermetic Package
SHD226707
MAXIMUM RATINGS
ALL RATINGS ARE AT T = 25°C UNLESS OTHERWISE SPECIFIED.
A
RATING
SYMBOL MIN. TYP. MAX.
UNITS
GATE TO SOURCE VOLTAGE
VGS
-
-
±20
Volts
CONTINUOUS DRAIN CURRENT VGS = 10V, TC = 25°C
ID
VGS = 10V, TC = 100°C
-
-
30
Amps
18
PULSED DRAIN CURRENT
@ TC = 25°C
IDM
-
-
55
Amps
OPERATING AND STORAGE TEMPERATURE
TOP/TSTG
-55
-
+175
°C
TERMAL RESISTANCE JUNCTION TO CASE
RθJC
-
-
1.4
°C/W
TOTAL DEVICE DISSIPATION @ TC = 25°C
PD
-
-
107
Watts
ELECTRICAL CHARACTERISTICS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
BVDSS
100
-
-
Volts
VGS = 0V, ID = 250 µA
DRAIN TO SOURCE ON STATE RESISTANCE
â¦
VGS = 10V, ID = 30A
RDS(ON)
-
VGS = 10V, ID = 18A TA=125oC
-
-
0.049
-
0.080
GATE THRESHOLD VOLTAGE VDS = VGS, ID = 250µA
VGS(th)
2.0
-
4.0
Volts
FORWARD TRANSCONDUCTANCE
gfs
-
23
-
S(1/â¦)
VDS = 15V, ID = 30A
ZERO GATE VOLTAGE DRAIN CURRENT, TJ = 25°C
IDSS
-
-
10
(VDS = 100V, VGS = 0V), TJ = 125°C
100
µA
GATE TO SOURCE LEAKAGE FORWARD VGS = 20V
IGSS
-
-
100
nA
GATE TO SOURCE LEAKAGE REVERSE VGS = -20V
-100
TOTAL GATE CHARGE
VGS = 10V,
Qg
-
29
-
GATE TO SOURCE CHARGE
VDS = 50V,
Qgs
-
10
-
nC
GATE TO DRAIN CHARGE
ID = 30A
Qgd
-
11
-
TURN ON DELAY TIME
VDD = 50V,
td(ON)
-
-
26
RISE TIME
ID = 30A,
tr
20
nsec
TURN OFF DELAY TIME
RG = 2.5â¦,
td(OFF)
54
FALL TIME
VGS = 10V
tf
40
DIODE FORWARD VOLTAGE
TJ = 25°C,IS = 30A
VSD
-
-
1.35
Volts
VGS = 0V
REVERSE RECOVERY TIME
TJ = 25°C,
trr
-
-
80
nsec
IS = 30A,
di/dt ⤠100A/µsec
⢠221 WEST INDUSTRY COURT ⢠DEER PARK, NY 11729-4681 ⢠PHONE (631) 586-7600 ⢠FAX (631) 242-9798 â¢
⢠World Wide Web - http://www.sensitron.com ⢠E-mail Address - sales@sensitron.com â¢
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