SHD226703 Datasheet, PDF (1/3 Pages) Sensitron – HERMETIC POWER MOSFET - N-CHANNEL

SENSITRON
SEMICONDUCTOR
SHD226703
TECHNICAL DATA
DATASHEET 4193, REV. -
HERMETIC POWER MOSFET - N-CHANNEL
FEATURES:
• 200 Volt, 0.08 Ohm, 27A MOSFET
• Isolated Hermetic Metal Package
• Low R_{DS (on)}
MAXIMUM RATINGS
RATING
ALL
RATINGS
ARE
AT
T
C
=
25°C
UNLESS
OTHERWISE
SPECIFIED.
SYMBOL MIN. TYP. MAX.
UNITS
GATE TO SOURCE VOLTAGE
ON-STATE DRAIN CURRENT
PULSED DRAIN CURRENT
OPERATING AND STORAGE TEMPERATURE
TOTAL DEVICE DISSIPATION
THERMAL RESISTANCE, JUNCTION TO CASE
V_GS
-
I_D25
-
I_DM
-
T_J/T_STG
-55
P_D
-
R_θJC
-
-
±20
Volts
-
27
Amps
-
60
Amps
-
+175
°C
-
150
Watts
-
1
°C/W
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
DRAIN TO SOURCE BREAKDOWN VOLTAGE
V_GS = 0V, I_D = 250µA
STATIC DRAIN TO SOURCE ON STATE RESISTANCE
V_GS = 10V, I_D = 20A
GATE THRESHOLD VOLTAGE V_DS = V_GS, I_D = 250µA
FORWARD TRANSCONDUCTANCE
V_DS = 15V, I_D = 30A
ZERO GATE VOLTAGE DRAIN CURRENT
V_DS = 0.8 x Max. rating, V_GS = 0V, T_J = 25°C
T_J = 125°C
GATE TO SOURCE LEAKAGE FORWARD V_GS = 20V
GATE TO SOURCE LEAKAGE REVERSE V_GS = -20V
TURN ON DELAY TIME
RISE TIME
V_DD = 100V
I_D = 20A
TURN OFF DELAY TIME
V _GS=10V
FALL TIME
R_G = 2.5Ω
DIODE FORWARD VOLTAGE
I_F = 20A, V_GS = 0V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
REVERSE RECOVERY TIME
T_J = 25°C,
I_F=50A, V_R = 100V
di/dt = 100A/µsec
INPUT CAPACITANCE
OUTPUT CAPACITANCE
REVERSE TRANSFER CAPACITANCE
V_GS = 0 V,
V_DS = 25 V,
f = 1.0MHz
SYMBOL
BV_DSS
R_DS(ON)
V_GS(th)
g_fs
I_DSS
I_GSS
t_d(ON)
t_r
t_d(OFF)
t_f
V_SD
t_rr
C_iss
C_oss
C_rss
MIN.
200
-
2
15
-
-
-
-
-
-
TYP.
-
0.07
-
-
-
-
15
35
40
30
1.0
115
2150
215
90
MAX.
-
0.08
4
-
1
50
100
-100
25
55
60
45
1.5
170
-
UNITS
Volts
Ω
Volts
S(1/ Ω )
µA
nA
nsec
Volts
nsec
pF
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