SHD226701 Datasheet, PDF (1/2 Pages) Sensitron – LOW RDS(on) HERMETIC POWER MOSFET - N-CHANNEL

SENSITRON
SEMICONDUCTOR
SHD226701
TECHNICAL DATA
DATA SHEET 4188, REV. A
LOW R_DS(on) HERMETIC POWER MOSFET - N-CHANNEL
FEATURES:
• 100 Volt, 0.022 Ohm, 60A MOSFET
• Isolated Hermetic Metal Package
• Ultra Low R_{DS (on)}
MAXIMUM RATINGS
ALL RATINGS ARE AT T = 25°C UNLESS OTHERWISE SPECIFIED.
C
RATING
SYMBOL MIN. TYP. MAX.
UNITS
GATE TO SOURCE VOLTAGE
V_GS
-
-
±20
Volts
ON-STATE DRAIN CURRENT
I_D25
-
-
35*
Amps
PULSED DRAIN CURRENT
I_DM
-
-
170
Amps
OPERATING AND STORAGE TEMPERATURE
T_J/T_STG
-55
-
+150
°C
TOTAL DEVICE DISSIPATION
P_D
-
-
190
Watts
THERMAL RESISTANCE, JUNCTION TO CASE
R_θJC
-
-
0.65
°C/W
Note: * current limited by package; die rating is 90A
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
DRAIN TO SOURCE BREAKDOWN VOLTAGE
V_GS = 0V, I_D = 250µA
STATIC DRAIN TO SOURCE ON STATE RESISTANCE
V_GS = 10V, I_D = 30A
GATE THRESHOLD VOLTAGE V_DS = V_GS, I_D = 250µA
FORWARD TRANSCONDUCTANCE
V_DS = 15V, I_D = 30A
ZERO GATE VOLTAGE DRAIN CURRENT
V_DS = 0.8 x Max. rating, V_GS = 0V, T_J = 25°C
T_J = 125°C
GATE TO SOURCE LEAKAGE FORWARD V_GS = 20V
GATE TO SOURCE LEAKAGE REVERSE V_GS = -20V
TURN ON DELAY TIME
V_DD = 50V
RISE TIME
I_D = 55A
TURN OFF DELAY TIME
V_GS=10V
FALL TIME
R_G = 2.5Ω
DIODE FORWARD VOLTAGE
I_F = 30A, V_GS = 0V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
REVERSE RECOVERY TIME
T_J = 25°C,
I_F=30A, V_R = 100V
di/dt = 100A/µsec
INPUT CAPACITANCE
OUTPUT CAPACITANCE
REVERSE TRANSFER CAPACITANCE
V_GS = 0 V,
V_DS = 25 V,
f = 1.0MHz
SYMBOL
BV_DSS
R_DS(ON)
V_GS(th)
g_fs
I_DSS
I_GSS
t_d(ON)
t_r
t_d(OFF)
t_f
V_SD
t_rr
C_iss
C_oss
C_rss
MIN.
100
-
2
25
-
-
-
-
-
-
TYP.
-
0.022
-
-
-
-
20
110
65
100
1.0
70
8700
740
450
MAX.
-
0.028
4
-
1
50
100
-100
30
170
100
150
1.2
140
-
UNITS
Volts
Ω
Volts
S(1/Ω)
µA
nA
nsec
Volts
nsec
pF
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