SHD226412 Datasheet, PDF (1/3 Pages) Sensitron – HERMETIC POWER MOSFET N-CHANNEL

SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 370, REV. A
SHD226412
SHD226412R
HERMETIC POWER MOSFET
N-CHANNEL
DESCRIPTION: 100 VOLT, 33 AMP, 0.06 OHM MOSFET IN A HERMETIC TO-257 PACKAGE.
MAXIMUM RATINGS
ALL RATINGS ARE AT T_A = 25•C UNLESS OTHERWISE SPECIFIED.
RATING
SYMBOL MIN. TYP. MAX.
UNITS
GATE TO SOURCE VOLTAGE
V_GS
-
-
–20
Volts
CONTINUOUS DRAIN CURRENT V_GS=10V, T_C = 25•C
I_D
V_GS=10V, T_C = 100•C
-
-
33
Amps
20
PULSED DRAIN CURRENT
@ T_C = 25•C
I_DM
-
-
99
Amps(pk)
OPERATING AND STORAGE TEMPERATURE
T_OP/T_STG
-55
-
+150
•C
TERMAL RESISTANCE JUNCTION TO CASE
R¡ _JC
-
-
0.80
•C/W
TOTAL DEVICE DISSIPATION @ T_C = 25•C
P_D
-
-
150
Watts
ELECTRICAL CHARACTERISTICS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
V_GS = 0V, I_D = 250mA
DRAIN TO SOURCE ON STATE RESISTANCE
I_D = 16.5A, V_GS = 10V@T_J = 25•C
FORWARD TRANSCONDUCTANCE
V_DS = 80Vdc, I_DS = 16.5A
ZERO GATE VOLTAGE DRAIN CURRENT
V_DS = 100Vdc, V_GS = 0Vdc
V_DS = 100Vdc
V_GS = 0Vdc, T_J = 125•C
GATE TO BODY LEAKAGE CURRENT V_GS = –20Vdc,
V_DS = 0Vdc
TOTAL GATE CHARGE
GATE TO SOURCE CHARGE
GATE TO DRAIN CHARGE
(V_GS = 10 Vdc,
V_DS = 80Vdc,
I_D = 33Adc)
TURN ON DELAY TIME
RISE TIME
TURN OFF DELAY TIME
(V_DD = 50V,
I_D = 33Adc,
V_GS = 10 Vdc,
FALL TIME
R_G = 9.1W)
FORWARD VOLTAGE,
(I_S = 33Adc, V_GS = 0V)
(I_S = 33Adc, V_GS = 0Vdc, T_J = 125•C)
REVERSE RECOVERY TIME (I_S = 33Adc, V_GS = 0Vdc
REVERSE RECOVERY CHARGE di/dt = 100A/msec)
INPUT CAPACITANCE
(V_DS = 25 Vdc,
OUTPUT CAPACITANCE
V_GS = 0 Vdc,
REVERSE TRANSFER CAPACITANCE
f = 1 MHz)
BV_DSS
R_DS(ON)
g_fs
I_DSS
I_GSS
Q_g
Q_gs
Q_gd
t_d(ON)
t_r
t_d(ON)
t_f
V_SD
t_rr
Q_rr
C_iss
C_oss
C_rss
100
-
-
-
-
0.06
8.0
-
-
-
-
10
100
-
-
+100
-100
52
110
12
32
-
18
40
164
330
48
100
83
170
-
1.0
2.0
0.98
-
-
144
.93
-
1830 2500
678 1200
559 1100
Volts
W
S(1/W)
mA
nA
nC
nsec
Volts
nsec
mC
pF
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