SHD226408 Datasheet, PDF (1/3 Pages) Sensitron – HERMETIC POWER MOSFET N-CHANNEL

SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 472, REV -
SHD226408
HERMETIC POWER MOSFET
N-CHANNEL
DESCRIPTION: 1000 VOLT, 3.5 OHM MOSFET IN A HERMETIC TO-257 PACKAGE.
MAXIMUM RATINGS
ALL RATINGS ARE AT T_A = 25•C UNLESS OTHERWISE SPECIFIED.
RATING
SYMBOL MIN. TYP. MAX.
UNITS
GATE TO SOURCE VOLTAGE
V_GS
-
-
–20
Volts
CONTINUOUS DRAIN CURRENT
@ T_C = 25•C
I_D
-
-
3.9
Amps
PULSED DRAIN CURRENT
@ T_C = 25•C
I_DM
-
-
16
Amps(pk)
OPERATING AND STORAGE TEMPERATURE
T_OP/T_STG
-55
-
+150
•C
TERMAL RESISTANCE JUNCTION TO CASE
R¡ _JC
-
-
1.2
•C/W
TOTAL DEVICE DISSIPATION @ T_C = 25•C
P_D
-
-
100
Watts
ELECTRICAL CHARACTERISTICS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
V_GS = 0V, I_D = 1.0mA
GATE THRESHOLD VOLTAGE V_DS = V_GS, I_D = 250mA
DRAIN TO SOURCE ON STATE RESISTANCE
V_GS = 10Vdc, I_D = 2.5A
PULSE TEST, t ˆ 300 ms, DUTY CYCLE d ˆ 2%
ZERO GATE VOLTAGE DRAIN CURRENT
V_DS = 0.8xMax. Rating, V_GS = 0Vdc
V_DS = 0.8 Max. Rating
V_GS = 0Vdc, T_J = 125•C
GATE TO BODY LEAKAGE CURRENT
TOTAL GATE CHARGE
GATE TO SOURCE CHARGE
GATE TO DRAIN CHARGE
TURN ON DELAY TIME
RISE TIME
TURN OFF DELAY TIME
FALL TIME
V_GS = –20Vdc
V_GS = 10 Vdc,
V_DS = 400V,
I_D = 3.9A
V_GS = 15 Vdc
V_DD = 400,
I_D = 3.9A_,
R_G = 9.1W
FORWARD VOLTAGE T_J = 25•C, I_S = 3.9A, V_GS = 0V
PULSE TEST, t ˆ 300 ms, DUTY CYCLE d ˆ 2%
REVERSE RECOVERY TIME
T_J = 25•C, I_S = 3.9A
REVERSE RECOVERY CHARGE
di/dt = 100A/msec
V_DD ˆ 50V
INPUT CAPACITANCE
OUTPUT CAPACITANCE
REVERSE TRANSFER CAPACITANCE
V_DS = 25 Vdc,
V_GS = 0 Vdc,
f = 1 MHz
-
BV_DSS
V_GS(TH)
R_DS(ON)
I_DSS
I_GSS
Q_g
Q_gs
Q_gd
t_d(ON)
t_r
t_d(OFF)
t_f
V_SD
t_rr
Q_rr
C_iss
C_oss
C_rss
1000
-
2.0
-
-
-
-
-
-
-
51
-
5.4
29
-
-
-
-
-
-
-
-
-
1700
250
100
-
4.0
3.5
25
250
–100
120
12
75
30
50
170
50
1.8
1000
5.6
-
Volts
W
mA
nA
nC
nsec
Volts
nsec
mC
pF
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