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SHD226404 Datasheet, PDF (1/2 Pages) Sensitron – HERMETIC POWER MOSFET N-CHANNEL
SENSITRON
SEMICONDUCTOR
SHD226404
TECHNICAL DATA
DATA SHEET 213, REV. B
Formerly Part Number SHD2264
HERMETIC POWER MOSFET N-CHANNEL
FEATURES:
• 400 Volt, 0.55 Ohm, 6.9 A MOSFET
• Low RDS (on)
• Equivalent to IRFY340 Series
• Add a C after SHD for ceramic eyelets
MAXIMUM RATINGS
RATING
GATE TO SOURCE VOLTAGE
ON-STATE DRAIN CURRENT @ TC = 25°C
PULSED DRAIN CURRENT @ TC = 25°C
OPERATING AND STORAGE TEMPERATURE
TOTAL DEVICE DISSIPATION @ TC = 25°C
ALL RATINGS ARE AT T = 25°C UNLESS OTHERWISE SPECIFIED.
C
SYMBOL MIN. TYP. MAX.
UNITS
VGS
-
-
±20
Volts
ID (on)
-
-
6.9
Amps
IDM
-
-
27
Amps
TOP/TSTG
-55
-
+150
°C
PD
-
-
60
Watts
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
DRAIN TO SOURCE BREAKDOWN VOLTAGE
VGS = 0V, ID = 1.0 mA
GATE TO SOURCE ON-STATE VOLTAGE
VGS = 10V, ID = 6.9A, VDS = 0.5 X VDS Max.
GATE DRAIN CHARGE
VGS = 10V, ID = 6.9A, VDS = 0.5 X VDS Max.
STATIC DRAIN TO SOURCE ON STATE RESISTANCE
VGS = 10V, ID = 4.4A
VGS = 10V, ID = 6.9A
GATE THRESHOLD VOLTAGE VDS = VGS, ID = 250μA
FORWARD TRANSCONDUCTANCE
VDS ≥ 15VDS(on), ID = 4.4A
ZERO GATE VOLTAGE DRAIN CURRENT
VDS = 0.8x Max. Rating, VGS = 0V
VDS = 0.8x Max. Rating, VGS = 0V, TJ = 125°C
GATE TO SOURCE LEAKAGE FORWARD VGS = 20V
GATE TO SOURCE LEAKAGE REVERSE VGS = -20V
TURN ON DELAY TIME
VDD = 200V,
RISE TIME
ID =6.9A,
TURN OFF DELAY TIME
RG = 9.1Ω,
FALL TIME
VGS = 10V
DIODE FORWARD VOLTAGE
TC = 25°C, IS = 6.9A,
VGS = 0V
REVERSE RECOVERY TIME
TJ = 25°C,
IS = 6.9 A, di/dt = 100A/μsec,
VDD ≤ 50 V
INPUT CAPACITANCE
VGS = 0 V,
OUTPUT CAPACITANCE
VDS = 25 V,
REVERSE TRANSFER CAPACITANCE f = 1.0MHz
THERMAL RESISTANCE, JUNCTION TO CASE
SYMBOL MIN.
BVDSS
400
Qgs
2.2
Qgd
13.8
-
RDS(ON)
VGS(th)
2.0
gfs
-
-
IDSS
IGSS
-
td(ON)
-
tr
td(OFF)
tf
VSD
-
trr
-
Ciss
-
Coss
Crss
RthJC
-
TYP.
-
-
-
-
-
7.7
-
-
-
-
-
1400
350
230
-
MAX.
-
10
40.5
0.55
0.63
4.0
-
25
250
100
-100
25
92
79
58
1.5
660
-
2.1
UNITS
Volts
nC
nC
Ω
Volts
S(1/Ω)
µA
nA
nsec
Volts
nsec
pF
°C/W
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