SHD226314 Datasheet, PDF (1/3 Pages) Sensitron – HERMETIC POWER MOSFET N-CHANNEL, LOGIC LEVEL

SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 816, REV. -
SHD226314
HERMETIC POWER MOSFET
N-CHANNEL, LOGIC LEVEL
œ 60 VOLT, 0.05 OHM, 30A MOSFET
œ Fast Switching
œ Low R_{DS (on)}
œ Logic Level Gate Driver
MAXIMUM RATINGS
ALL
RATINGS
ARE
AT
T
A
=
25•C
UNLESS
OTHERWISE
SPECIFIED.
RATING
SYMBOL MIN. TYP. MAX.
UNITS
GATE TO SOURCE VOLTAGE
V_GS
-
-
–20
Volts
CONTINUOUS DRAIN CURRENT
@ T_C = 25•C
I_D
-
-
20*
Amps
PULSED DRAIN CURRENT
@ T_C = 25•C
I_DM
-
-
110 Amps(pk)
OPERATING AND STORAGE TEMPERATURE
T_OP/T_STG
-55
-
+175
•C
TERMAL RESISTANCE JUNCTION TO CASE
R¡ _JC
-
-
1.32
•C/W
TOTAL DEVICE DISSIPATION @ T_C = 25•C
P_D
-
-
110
Watts
ELECTRICAL CHARACTERISTICS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
BV_DSS
60
V_GS = 0V, I_D = 250mA
GATE THRESHOLD VOLTAGE V_DS = V_GS, I_D = 250mA
V_GS(th)
1.0
DRAIN TO SOURCE ON STATE RESISTANCE
V_GS = 5.0Vdc, I_D = 18A
R_DS(ON)
-
V_GS = 4.0Vdc I_D = 15A
ZERO GATE VOLTAGE DRAIN CURRENT
-
V_DS = Max. Rating, V_GS = 0Vdc
I_DSS
V_DS = 0.8xMax. Rating
V_GS = 0Vdc, T_J = 150•C
GATE TO BODY LEAKAGE CURRENT V_GS = –20Vdc,
I_GSS
-
-
-
-
2.0
-
0.055
0.075
-
25
250
-
–100
Volts
Volts
W
mA
nA
TOTAL GATE CHARGE
V_GS = 5.0 Vdc
GATE TO SOURCE CHARGE
V_DS = 48V,
GATE TO DRAIN CHARGE
I_D = 30A
TURN ON DELAY TIME
V_DD = 30V,
RISE TIME
I_D = 30A,
TURN OFF DELAY TIME
R_G = 6.0W
FALL TIME
V_GS = 5.0V
FORWARD VOLTAGE T_J = 25•C, I_S = 30A, V_GS = 0V
REVERSE RECOVERY TIME
I_F = 30A,
REVERSE RECOVERY CHARGE di/dt ˆ 100A/msec,
Q_g
Q_gs
Q_gd
t_d(ON)
t_r
t_d(OFF)
t_f
V_SD
t_rr
-
-
35
7.1
25
-
14
-
170
30
56
-
-
1.6
-
120
180
nC
nsec
Volts
nsec
INPUT CAPACITANCE
V_DS = 25 Vdc,
C_iss
-
1600
-
pF
OUTPUT CAPACITANCE
V_GS = 0 Vdc,
C_oss
660
REVERSE TRANSFER CAPACITANCE
f = 1 MHz
C_rss
170
* Current is limited by package
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