SHD226313 Datasheet, PDF (1/3 Pages) Sensitron – HERMETIC POWER MOSFET P-CHANNEL

SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 817, REV -
HERMETIC POWER MOSFET
P-CHANNEL
FEATURES:
œ -60 Volt, 0.4 Ohm, -18 A MOSFET
œ Isolated Hermetic Metal Package
œ Fast Switching
œ Low R_{DS (on)}
SHD226313
MAXIMUM RATINGS
ALL
RATINGS
ARE
AT
T
C
=
25•C
UNLESS
OTHERWISE
SPECIFIED.
RATING
SYMBOL MIN. TYP. MAX.
UNITS
GATE TO SOURCE VOLTAGE
V_GS
-
-
–20
Volts
ON-STATE DRAIN CURRENT @ T_C = 25•C
I_{D (on)}
-
-
-18
Amps
PULSED DRAIN CURRENT @ T_C = 25•C
I_DM
-
-
-72
Amps
OPERATING AND STORAGE TEMPERATURE
T_OP/T_STG
-55
-
+175
•C
THERMAL RESISTANCE, JUNCTION TO CASE
R¡ _JC
-
-
1.32
•C/W
TOTAL DEVICE DISSIPATION @ T_C = 25•C
P_D
-
-
110
Watts
ELECTRICAL CHARACTERISTICS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
BV_DSS
-60
-
-
Volts
V_GS = 0V, I_D = 250mA
STATIC DRAIN TO SOURCE ON STATE RESISTANCE
-
-
V_GS = -10V, I_D = -11A
R_DS(ON)
0.14
W
GATE THRESHOLD VOLTAGE V_DS = V_GS, I_D = -250mA
FORWARD TRANSCONDUCTANCE
V_DS = -25V_DS(on), I_D = -11A
ZERO GATE VOLTAGE DRAIN CURRENT
V_DS = -60, V_GS = 0V
V_DS = -48, V_GS = 0V, T_J = 150•C
GATE TO SOURCE LEAKAGE FORWARD V_GS = 20V
GATE TO SOURCE LEAKAGE REVERSE V_GS = -20V
TURN ON DELAY TIME
RISE TIME
V_DD = -30V,
I_D = -18A,
TURN OFF DELAY TIME
R_G = 12W,
FALL TIME
V_GS = -10V
TOTAL GATE CHARGE
V_GS = -10V, I_D = -18A V_DS = -48
GATE TO SOURCE ON-STATE VOLTAGE
V_GS = -10V, I_D = -18A V_DS = -48
GATE DRAIN CHARGE
V_GS = -10V, I_D = -18A V_DS = -48
DIODE FORWARD VOLTAGE
T_C = 25•C, I_S = -18A,
V_GS = 0V
REVERSE RECOVERY TIME
T_J = 25•C,
I_F = -18 A, di/dt = -100A/msec,
V_GS(th)
g_fs
I_DSS
I_GSS
t_d(ON)
t_r
t_d(OFF)
t_f
Q_g
Q_gs
Q_gd
V_SD
t_rr
-2.0
-
-4.0
5.9
-
-
-
-
-100
-500
-
-
100
-100
-
18
-
120
20
58
-
-
34
-
-
9.9
-
-
16
-
-
-6.3
-
-
440
Volts
S(1/W)
mA
nA
nsec
nC
nC
nC
Volts
nsec
INPUT CAPACITANCE
V_GS = 0 V,
C_iss
-
1100
-
OUTPUT CAPACITANCE
V_DS = 25 V,
C_oss
620
pF
REVERSE TRANSFER CAPACITANCE f = 1.0MHz
C_rss
100
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