SHD226305 Datasheet, PDF (1/3 Pages) Sensitron – HERMETIC POWER MOSFET N-CHANNEL

SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 336, REV. A
HERMETIC POWER MOSFET
N-CHANNEL
FEATURES:
œ 500 Volt, 1.6 Ohm MOSFET
œ Isolated and Hermetically Sealed
œ Equivalent to IRFY430M
SHD226305
SHD226305B
MAXIMUM RATINGS
ALL RATINGS ARE AT T_A = 25•C UNLESS OTHERWISE SPECIFIED.
RATING
SYMBOL MIN. TYP. MAX.
UNITS
GATE TO SOURCE VOLTAGE
V_GS
-
-
–20
Volts
CONTINUOUS DRAIN CURRENT V_GS=10V, T_C = 25•C
I_D
V_GS=10V, T_C = 100•C
-
-
3.7
Amps
2.4
PULSED DRAIN CURRENT
@ T_C = 25•C
I_DM
-
-
14
Amps
OPERATING AND STORAGE TEMPERATURE
T_OP/T_STG
-55
-
+150
•C
TERMAL RESISTANCE JUNCTION TO CASE
R¡ _JC
-
-
1.45
•C/W
TOTAL DEVICE DISSIPATION @ T_C = 25•C
P_D
-
-
80
Watts
ELECTRICAL CHARACTERISTICS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
V_GS = 0V, I_D = 1.0mA
DRAIN TO SOURCE ON STATE RESISTANCE
V_GS = 10V, I_D = 2.4A
GATE THRESHOLD VOLTAGE V_DS = V_GS, I_D = 250mA
FORWARD TRANSCONDUCTANCE
V_DS ˜ 15V, I_D = 2.4A
ZERO GATE VOLTAGE DRAIN CURRENT, T_J = 25•C
(V_DS = 0.8xMax. Rating, V_GS = 0V), T_J = 125•C
GATE TO SOURCE LEAKAGE FORWARD V_GS = 20V
GATE TO SOURCE LEAKAGE REVERSE V_GS = -20V
TOTAL GATE CHARGE
V_GS = 10 V,
GATE TO SOURCE CHARGE V_DS = 0.5 x. V_DS Max.,
GATE TO DRAIN CHARGE
I_D =3.7A
TURN ON DELAY TIME
V_DD = 250V,
RISE TIME
I_D = 3.7A,
TURN OFF DELAY TIME
R_G = 7.5W,
FALL TIME
V_GS = 10V
DIODE FORWARD VOLTAGE
T_J = 25•C, I_S = 3.7A,
V_GS = 0V
REVERSE RECOVERY TIME
T_J = 25•C,
I_s = 3.7A,
di/dt ˆ = 100A/msec,
REVERSE RECOVERY CHARGE
V_DD ˆ 50V
INPUT CAPACITANCE
V_GS = 0V, V_DS = 25V
OUTPUT CAPACITANCE
f=1MHz
REVERSE TRANSFER CAPACITANCE
BV_DSS
R_DS(ON)
V_GS(th)
g_fs
I_DSS
I_GSS
Q_g
Q_gs
Q_gd
t_d(ON)
t_r
t_d(OFF)
t_f
V_SD
t_rr
Q_rr
C_iss
C_oss
C_rss
500
-
-
-
2.0
-
1.5
-
-
-
-
-
19.8
-
2.2
5.5
-
-
-
-
-
-
-
610
135
65
-
1.6
4.0
-
25
250
100
-100
29.5
4.6
19.7
35
30
55
30
1.4
900
7.0
-
Volts
W
Volts
S(1/W)
mA
nA
nC
nsec
Volts
nsec
mC
pF
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