SHD226302 Datasheet, PDF (1/2 Pages) Sensitron – HERMETIC POWER MOSFET N-CHANNEL

SENSITRON
SEMICONDUCTOR
SHD226302
TECHNICAL DATA
DATA SHEET 222, REV. B
Formerly Part Number SHD22632
HERMETIC POWER MOSFET
N-CHANNEL
FEATURES:
• 100 Volt, .19 Ohm, 11A MOSFET
• Isolated Hermetic Metal Package
• Fast Switching
• Low R_{DS (on)}
• Equivalent to IRFY130M
MAXIMUM RATINGS
ALL RATINGS ARE AT T = 25°C UNLESS OTHERWISE SPECIFIED.
C
RATING
SYMBOL MIN. TYP. MAX.
UNITS
GATE TO SOURCE VOLTAGE
V_GS
-
-
±20
Volts
ON-STATE DRAIN CURRENT
PULSED DRAIN CURRENT
OPERATING AND STORAGE TEMPERATURE
I_D
-
I_DM
-
T_J/T_STG
-55
-
11
Amps
-
44
Amps
-
+150
°C
TOTAL DEVICE DISSIPATION
P_D
-
-
45
Watts
ELECTRICAL CHARACTERISTICS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
BV_DSS
100
-
-
V_GS = 0V, I_D = 1.0 mA
STATIC DRAIN TO SOURCE ON STATE RESISTANCE
-
-
.19
V_GS = 10V, I_D = 7.0A R_DS(ON)
GATE THRESHOLD VOLTAGE
250μA
V_DS = V_GS, I_D =
V_GS(th)
2.0
-
4.0
FORWARD TRANSCONDUCTANCE
V_DS ≥ 15V, I_D = 7.0A
g_fs
3.0
-
-
ZERO GATE VOLTAGE DRAIN CURRENT
V_DS = 0.8 x Max. rating, V_GS = 0V
I_DSS
-
-
25
T_J = 25°C
250
GATE TO SOURCE LEAKAGE FORWARD V_GS =
I_GSS
-
-
100
20V
-100
GATE TO SOURCE LEAKAGE REVERSE V_GS = -20V
TURN ON DELAY TIME
V_DD = 50V,
t_d(ON)
-
-
30
RISE TIME
I_D = 11A
t_r
75
TURN OFF DELAY TIME
FALL TIME
R_G = 7.5Ω
t_d(OFF)
t_f
40
45
DIODE FORWARD VOLTAGE
I_S = 14A, V_GS = 0V
V_SD
Pulse test, t ≤ 300 μs, duty cycle d ≤ 2
-
1.0
1.5
%
REVERSE RECOVERY TIME
T_J = 25°C,
V_DD ≤ 50V
t_rr
di/dt = 100A/μsec
-
-
300
INPUT CAPACITANCE
OUTPUT CAPACITANCE
REVERSE TRANSFER CAPACITANCE
V_GS = 0 V
V_DS = 25 V
f = 1.0MHz
THERMAL RESISTANCE, JUNCTION TO CASE
C_iss
C_oss
C_rss
R_thJC
-
650
-
240
44
-
-
2.8
Volts
Ω
Volts
S(1/Ω)
μA
nA
nsec
Volts
nsec
pF
°C/W
•221 WEST INDUSTRY COURT • DEER PARK, NY 11729-4681 • PHONE [phone] • FAX [phone]•
• World Wide Web Site - www.sensitron.com • E-Mail Address - [e-mail] •