SHD226208 Datasheet, PDF (1/3 Pages) Sensitron – HERMETIC POWER MOSFET N-CHANNEL

SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 835, REV. -
HERMETIC POWER MOSFET
N-CHANNEL
SHD226208
DESCRIPTION: A 1000 VOLT, 1.4 AMP, 11 OHM MOSFET IN A HERMETIC TO-257 PACKAGE.
MAXIMUM RATINGS
RATING
ALL
RATINGS
ARE
AT
T
A
=
25•C
UNLESS
OTHERWISE
SPECIFIED.
SYMBOL MIN. TYP. MAX.
UNITS
GATE TO SOURCE VOLTAGE
V_GS
-
-
–20
Volts
CONTINUOUS DRAIN CURRENT V_GS=10V, T_C = 25•C
I_D
V_GS=10V, T_C = 100•C
-
-
1.4
Amps
0.86
PULSED DRAIN CURRENT
@ T_C = 25•C
I_DM
-
-
5.6
Amps(pk)
OPERATING AND STORAGE TEMPERATURE
T_OP/T_STG
-55
-
+150
•C
TERMAL RESISTANCE JUNCTION TO CASE
R¡ _JC
-
-
1.45
•C/W
TOTAL DEVICE DISSIPATION @ T_C = 25•C
P_D
-
-
85
Watts
ELECTRICAL CHARACTERISTICS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
BV_DSS
1000
-
V_GS = 0V, I_D = 250mA
DRAIN TO SOURCE ON STATE RESISTANCE
I_D = 0.84A, V_GS = 10V@T_J = 25•C RDS(ON)
-
-
GATE THRESHOLD VOLTAGE V_DS = V_GS, I_D = 250mA VGS(th)
2.0
-
FORWARD TRANSCONDUCTANCE
g_fs
1.0
-
V_DS = 50Vdc, I_DS = 0.84A
ZERO GATE VOLTAGE DRAIN CURRENT
-
-
V_DS = 1000Vdc, V_GS = 0Vdc
I_DSS
V_DS = 800Vdc, V_GS = 0Vdc, T_J = 125•C
GATE TO BODY LEAKAGE CURRENT V_GS = –20Vdc,
I_GSS
-
-
V_DS = 0Vdc
TOTAL GATE CHARGE
(V_GS = 10 Vdc,
Q_g
-
-
GATE TO SOURCE CHARGE
V_DS = 400Vdc,
Q_gs
GATE TO DRAIN CHARGE
I_D = 1.4Adc)
Q_gd
-
Volts
11
4.0
-
100
500
+100
-100
38
4.9
22
W
Volts
S(1/W)
mA
nA
nC
TURN ON DELAY TIME
(V_DS = 500V,
RISE TIME
I_D = 1.4Adc,
TURN OFF DELAY TIME
V_GS = 10 Vdc,
FALL TIME
R_G = 18W)
FORWARD VOLTAGE,
(I_S = 1.4Adc, V_GS = 0V)
REVERSE RECOVERY TIME (I_F = 1.4Adc, V_GS = 0Vdc
REVERSE RECOVERY CHARGE di/dt = 100A/msec)
INPUT CAPACITANCE
(V_DS = 25 Vdc,
OUTPUT CAPACITANCE
V_GS = 0 Vdc,
REVERSE TRANSFER CAPACITANCE
f = 1 MHz)
t_d(ON)
t_r
t_d(ON)
t_f
V_SD
t_rr
Q_rr
C_iss
C_oss
C_rss
-
9.4
-
17
58
31
-
-
1.5
-
130
190
0.46 0.69
-
500
-
52
17
nsec
Volts
nsec
mC
pF
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