SHD226007 Datasheet, PDF (1/3 Pages) Sensitron – N-Channel Enhancement Mode Vertical DMOS FET

SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 704, REV. -
N-Channel Enhancement Mode
Vertical DMOS FET
SHD226007
œ Free From Secondary Breakdown
œ Low Power Drive Requirement
œ Ease of Paralleling
œ Low C_ISS and Fast Switching Speeds
œ Excellent Thermal Stability
œ Integral Source-Drain Diode
œ High Input Impedance and High Gain
MAXIMUM RATINGS
ALL RATINGS ARE AT T_A = 25•C UNLESS OTHERWISE SPECIFIED.
RATING
SYMBOL MIN. TYP. MAX.
UNITS
GATE TO SOURCE VOLTAGE
V_GS
-
-
–20
Volts
CONTINUOUS DRAIN CURRENT
LIMITED BY MAXIMUM RATED T_J
@ T_C = 25•C
I_D
-
-
100
Amps
PULSED DRAIN CURRENT
@ T_C = 25•C
I_DM
-
-
300 Amps(pk)
OPERATING AND STORAGE TEMPERATURE
T_OP/T_STG
-55
-
+150
•C
TERMAL RESISTANCE JUNCTION TO CASE
R¡ _JC
-
-
23.5
•C/W
TOTAL DEVICE DISSIPATION @ T_C = 25•C
P_D
-
-
5.3
Watts
ELECTRICAL CHARACTERISTICS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
BV_DSS
500
-
-
V_GS = 0V, I_D = 1.0mA
GATE THRESHOLD VOLTAGE V_DS = V_GS, I_D = 1.0mA V_GS(th)
2.0
-
4.0
DRAIN TO SOURCE ON STATE RESISTANCE
.V_GS = 5Vdc, I_D = 50mA
R_DS(ON)
-
45
V_GS = 10Vdc, I_D = 50mA
40
60
ZERO GATE VOLTAGE DRAIN CURRENT
-
-
V_DS = Max. Rating, V_GS = 0Vdc
I_DSS
V_DS = 0.8xMax. Rating
V_GS = 0Vdc, T_A = 125•C
GATE TO BODY LEAKAGE CURRENT V_GS = –20Vdc,
I_GSS
-
V_DS = 0
TURN ON DELAY TIME
V_DD = 25V,
t_d(ON)
-
RISE TIME
I_D = 150mA,
t_r
TURN OFF DELAY TIME
R_G = 25W
t_d(OFF)
FALL TIME
t_f
10
1.0
-
–100
-
10
15
10
10
FORWARD TRANSCONDUCTANCE
g_fs
V_DS = 25V, I_D = 50mA
REVERSE RECOVERY TIME
I_S = 0.5A,
t_rr
REVERSE RECOVERY CHARGE
V_GS = 0
50
100
-
-
300
-
Volts
Volts
W
mA
mA
nA
nsec
S(1/W)
nsec
INPUT CAPACITANCE
V_DS = 25 Vdc,
C_iss
-
45
55
pF
OUTPUT CAPACITANCE
V_GS = 0 Vdc,
C_oss
8.0
10
REVERSE TRANSFER CAPACITANCE
f = 1 MHz
C_rss
2.0
5.0
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