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SHD225714 Datasheet, PDF (1/2 Pages) Sensitron – HERMETIC POWER MOSFET N-CHANNEL
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 4325, REV -
HERMETIC POWER MOSFET
N-CHANNEL
FEATURES:
• 100 Volt, 0.028 Ohm MOSFET
• Characterized at VGS = 4.5V
• Hermetically Sealed
• TO-254 Hermetic Package
SHD225714
MAXIMUM RATINGS
ALL RATINGS ARE AT T = 25°C UNLESS OTHERWISE SPECIFIED.
A
RATING
SYMBOL MIN. TYP. MAX.
UNITS
GATE TO SOURCE VOLTAGE
VGS
-
-
±20
Volts
CONTINUOUS DRAIN CURRENT VGS = 10V, TC = 25°C
ID
VGS = 10V, TC = 100°C
-
-
40
Amps
28
PULSED DRAIN CURRENT
@ TC = 25°C
IDM
-
-
70
Amps
OPERATING AND STORAGE TEMPERATURE
TOP/TSTG
-55
-
+175
°C
TERMAL RESISTANCE JUNCTION TO CASE
RθJC
-
-
1.1
°C/W
TOTAL DEVICE DISSIPATION @ TC = 25°C
PD
-
-
136
Watts
ELECTRICAL CHARACTERISTICS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
BVDSS
100
-
-
Volts
VGS = 0V, ID = 250 µA
DRAIN TO SOURCE ON STATE RESISTANCE
Ω
VGS = 10V, ID = 40A
RDS(ON)
-
VGS = 10V, ID = 28A TA=125oC
-
-
0.028
-
0.053
DRAIN TO SOURCE ON STATE RESISTANCE
Ω
VGS = 4.5V, ID = 20A
RDS(ON)
-
-
0.032
GATE THRESHOLD VOLTAGE VDS = VGS, ID = 250µA
VGS(th)
1.0
-
3.0
Volts
FORWARD TRANSCONDUCTANCE
gfs
-
70
-
S(1/Ω)
VDS = 15V, ID = 40A
ZERO GATE VOLTAGE DRAIN CURRENT, TJ = 25°C
IDSS
-
-
10
(VDS = 100V, VGS = 0V), TJ = 125°C
100
µA
GATE TO SOURCE LEAKAGE FORWARD VGS = 20V
IGSS
-
-
100
nA
GATE TO SOURCE LEAKAGE REVERSE VGS = -20V
-100
TOTAL GATE CHARGE
VGS = 10V,
Qg
-
40
-
GATE TO SOURCE CHARGE
VDS = 50V,
Qgs
-
11
-
nC
GATE TO DRAIN CHARGE
ID = 40A
Qgd
-
9
-
TURN ON DELAY TIME
VDD = 50V,
td(ON)
-
8
13
RISE TIME
ID = 40A,
tr
40
60
nsec
TURN OFF DELAY TIME
RG = 2.5Ω,
td(OFF)
15
25
FALL TIME
VGS = 10V
tf
80
120
DIODE FORWARD VOLTAGE
TJ = 25°C,IS = 40A
VSD
-
1.0
1.5
Volts
VGS = 0V
REVERSE RECOVERY TIME
TJ = 25°C,
trr
-
75
120
nsec
IS = 40A,
di/dt = 100A/µsec
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