SHD225623 Datasheet, PDF (1/3 Pages) Sensitron – HERMETIC POWER MOSFET N-CHANNEL ULTRA LOW RDS(ON)

SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 4144, REV. -
HERMETIC POWER MOSFET
N-CHANNEL ULTRA LOW R_DS(ON)
FEATURES:
œ 200 Volt, 0.03 Ohm, 90A MOSFET
œ Isolated Hermetic Metal Package
œ Fast Switching
œ Ultra Low R_{DS (on)}
SHD225623
MAXIMUM RATINGS
ALL RATINGS ARE AT T_C = 25•C UNLESS OTHERWISE SPECIFIED.
RATING
SYMBOL MIN. TYP. MAX.
UNITS
GATE TO SOURCE VOLTAGE
V_GS
-
-
–30
Volts
ON-STATE DRAIN CURRENT
I_D
-
-
90
Amps
PULSED DRAIN CURRENT
I_DM
-
-
380
Amps
OPERATING AND STORAGE TEMPERATURE
T_J/T_STG
-55
-
+150
•C
TOTAL DEVICE DISSIPATION
P_D
-
-
150
Watts
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
DRAIN TO SOURCE BREAKDOWN VOLTAGE
V_GS = 0V, I_D = 0.25 mA
STATIC DRAIN TO SOURCE ON STATE RESISTANCE
V_GS = 10V, I_D = 56A
GATE THRESHOLD VOLTAGE V_DS = V_GS, I_D = 0.25mA
ZERO GATE VOLTAGE DRAIN CURRENT
V_DS = 0.8 x Max. rating, V_GS = 0V, T_J = 25•C
T_J = 125•C
GATE TO SOURCE LEAKAGE FORWARD V_GS = 30V
GATE TO SOURCE LEAKAGE REVERSE V_GS = -30V
TURN ON DELAY TIME
V_DD = 100V,
RISE TIME
I_D = 56A
TURN OFF DELAY TIME
V_GS=10V
FALL TIME
R_G = 1.2W
DIODE FORWARD VOLTAGE
I_S = 56A, V_GS = 0V
Pulse test, t ˆ 300 ms, duty cycle d ˆ 2 %
REVERSE RECOVERY TIME
T_J = 25•C,
IF=56A, di/dt = 100A/msec
INPUT CAPACITANCE
OUTPUT CAPACITANCE
REVERSE TRANSFER CAPACITANCE
V_GS = 0 V
V_DS = 25 V
f = 1.0MHz
THERMAL RESISTANCE, JUNCTION TO CASE
SYMBOL
BV_DSS
R_DS(ON)
V_GS(th)
I_DSS
I_GSS
t_d(ON)
t_r
t_d(OFF)
t_f
V_SD
t_rr
C_iss
C_oss
C_rss
R_thJC
MIN.
200
-
3
-
-
-
-
-
-
-
TYP.
-
-
-
-
-
23
160
43
79
-
230
6040
1070
170
-
MAX.
-
0.03
5
25
250
100
-100
-
1.5
340
-
1
UNITS
Volts
W
Volts
mA
nA
nsec
Volts
nsec
pF
•C/W
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