SHD225615 Datasheet, PDF (1/3 Pages) Sensitron – HERMETIC POWER MOSFET N-CHANNEL

SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 4167, REV -
HERMETIC POWER MOSFET
N-CHANNEL
FEATURES:
œ 400 Volt, .20 Ohm, 23A MOSFET
œ Isolated Hermetic Metal Package
œ Fast Switching
œ Low R_{DS (on)}
œ Similar to IRFM360
SHD225615
MAXIMUM RATINGS
ALL RATINGS ARE AT T_C = 25•C UNLESS OTHERWISE SPECIFIED.
RATING
SYMBOL MIN. TYP. MAX.
UNITS
GATE TO SOURCE VOLTAGE
V_GS
-
-
–20
Volts
ON-STATE DRAIN CURRENT
I_D
-
-
23
Amps
PULSED DRAIN CURRENT
@ T_C = 25•C
I_DM
-
-
92
Amps
OPERATING AND STORAGE TEMPERATURE
T_J/T_STG
-55
-
+150
•C
TOTAL DEVICE DISSIPATION @
T_C = 25•C
P_D
-
-
250
Watts
ELECTRICAL CHARACTERISTICS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
BV_DSS
400
-
-
Volts
V_GS = 0V, I_D = 1.0 mA
STATIC DRAIN TO SOURCE ON STATE RESISTANCE
V_GS = 10V, I_D = 14A
R_DS(ON)
-
V_GS = 10V, I_D = 23A
GATE THRESHOLD VOLTAGE V_DS = V_GS, I_D =
V_GS(th)
2.0
250mA
-
0.20
0.23
-
4.0
W
Volts
FORWARD TRANSCONDUCTANCE
V_DS ˜ 15V,
g_fs
I_DS = 14A
ZERO GATE VOLTAGE DRAIN CURRENT
1.4
-
S(1/W)
-
125•C
V_DS = 0.8 x Max. rating, V_GS = 0V
I_DSS
-
-
25
mA
T_J =
250
GATE TO SOURCE LEAKAGE FORWARD
20V
V_GS =
I_GSS
-
-
100
nA
-100
GATE TO SOURCE LEAKAGE REVERSE V_GS = -20V
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