SHD225613 Datasheet, PDF (1/3 Pages) Sensitron – HERMETIC POWER MOSFET N-CHANNEL

SENSITRON
SEMICONDUCTOR
SHD225613
TECHNICAL DATA
DATA SHEET 196, REV. A
Formerly Part Number SHD2258
HERMETIC POWER MOSFET
N-CHANNEL
FEATURES:
œ 1000 Volt, 1.05 Ohm, 12A MOSFET
œ Isolated Hermetic Metal Package
œ Fast Switching
œ Low R_{DS (on)}
œ Equivalent to 12N100 Series
MAXIMUM RATINGS
ALL
RATINGS
ARE
AT
T
C
=
25•C
UNLESS
OTHERWISE
SPECIFIED.
RATING
SYMBOL MIN. TYP. MAX.
UNITS
GATE TO SOURCE VOLTAGE
V_GS
-
-
–20
Volts
ON-STATE DRAIN CURRENT
I_{D (25)}
-
-
12
Amps
PULSED DRAIN CURRENT
@ T_C = 25•C
I_DM
-
-
–48
Amps
OPERATING AND STORAGE TEMPERATURE
T_J/T_STG
-55
-
+150
•C
TOTAL DEVICE DISSIPATION @ T_C = 25•C
P_D
-
-
300
Watts
ELECTRICAL CHARACTERISTICS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
V_GS = 0V, I_D = 3.0 mA
STATIC DRAIN TO SOURCE ON STATE RESISTANCE
V_GS = 10V, I_D = 0.5œI_D25
GATE THRESHOLD VOLTAGE V_DS = V_GS, I_D = 250mA
FORWARD TRANSCONDUCTANCE
V_DS = 10V; I_D = 0.5œI_D25
ZERO GATE VOLTAGE DRAIN CURRENT
V_DS = 0.8œ V_DSS
V_GS = 0V, T_J = 125•C
GATE TO SOURCE LEAKAGE FORWARD V_GS = 20V
GATE TO SOURCE LEAKAGE REVERSE V_GS = -20V
TURN ON DELAY TIME
V_DS = 0.5œV_DSS’,
RISE TIME
I_D = 0.5 I_D25,
TURN OFF DELAY TIME
R_G = 2.0W,
FALL TIME
V_GS = 10V
DIODE FORWARD VOLTAGE
I_F = I_S’ V_GS = 0V
Pulse test, t ˆ 300 ms, duty cycle d ˆ 2 %
REVERSE RECOVERY TIME
T_J = 150•C,
I_f = I_S,
di/dt = 100A/msec, V_R = 100V
INPUT CAPACITANCE
V_GS = 0 V
OUTPUT CAPACITANCE
V_DS = 25 V
REVERSE TRANSFER CAPACITANCE f = 1.0MHz
THERMAL RESISTANCE, JUNCTION TO CASE
BV_DSS
R_DS(ON)
V_GS(th)
g_fs
I_DSS
I_GSS
t_d(ON)
t_r
t_d(OFF)
t_f
V_SD
t_rr
C_iss
C_oss
C_rss
R_thJC
1000
-
-
-
2.0
-
6.0
12
-
-
-
-
-
21
33
62
32
-
-
-
1000
-
4000
310
70
-
-
-
1.05
4.5
-
0.25
1.0
100
-100
50
50
100
50
1.5
-
-
0.42
Volts
W
Volts
S(1/W)
mA
nA
nsec
Volts
nsec
pF
•C/W
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