SHD225605 Datasheet, PDF (1/3 Pages) Sensitron – HERMETIC POWER MOSFET N-CHANNEL

SENSITRON
SEMICONDUCTOR
SHD225605
SHD225606
TECHNICAL DATA
DATA SHEET 227, REV. B
HERMETIC POWER MOSFET
N-CHANNEL
(Standard and Fast-FET)
DESCRIPTION: A 500 VOLT, 24 AMP, 0.23 RDS(ON) MOSFET IN A HERMETIC TO-254 PACKAGE.
SHD225605: Formerly SHD2253, N-Channel Enhancement Mode.
SHD225606: Formerly SHD2253F, N-Channel Enhancement Mode with Fast Intrinsic Diode.
MAX. RATINGS / ELECTRICAL CHARACTERISTICS
(AT Tj=25⁰C UNLESS OTHERWISE SPECIFIED).
PARAMETER
SYMBOL MIN TYP MAX UNITS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
(V_GS = 0 V, I_D = 1.0 mA)
BV_DSS
500
-
-
Volts
DRAIN TO SOURCE ON STATE RESISTANCE
(V_GS = 10 V, I_D = 12.0 A)
CONTINUOUS DRAIN CURRENT
(V_DS = 10 V, T_C = 25⁰C)
R_DS(ON)
I_D
-
-
0.23
W
-
-
24
Amps
GATE THRESHOLD VOLTAGE
(V_DS = V_GS, I_D = 250_mA)
FORWARD TRANSCONDUCTANCE
(V_DS=10V,I_DS = 12.0A)
ZERO GATE VOLTAGE DRAIN CURRENT
(V_DS = 400V)
(V_GS = OV, TJ=125⁰C)
V_GS(th)
g_fs
I_DSS
2.0
-
4.0
Volts
11
21
-
S(1/_W)
-
-
200
m^A
-
-
1.0
mA
GATE TO SOURCE LEAKAGE
(V_GS = _–20V_DC, V_DS = 0)
TOTAL GATE CHARGE
(V_GS = 10V, V_DS = 250V_, I_D = 12.0A)
INPUT CAPACITANCE
OUTPUT CAPACITANCE
REVERSE TRANSFER CAPACITANCE
(V_GS = 0V, V_DS = 25V, f = 1.0 Mhz)
I_GSS
SHD225605 Q_g
SHD225606
C_iss
C_oss
C_rss
-
-
+/-
nA
100
-
-
190
nC
160
-
4200
-
-
450
-
pF
-
135
-
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