SHD225602 Datasheet, PDF (1/3 Pages) Sensitron – HERMETIC POWER MOSFET N-CHANNEL

SENSITRON
SEMICONDUCTOR
SHD225602
TECHNICAL DATA
DATA SHEET 473, REV. -
HERMETIC POWER MOSFET
N-CHANNEL
FEATURES:
œ 100 Volt, 75A, 0.025 Ohm, MOSFET
œ Isolated Hermetic Metal Package
œ Fast intrinsic Rectifier
œ Low R_{DS (on)}
œ Low package inductance-easy to drive and protect
œ Similar Part Type - IXTD75N10
MAXIMUM RATINGS
RATING
GATE TO SOURCE VOLTAGE
ON-STATE DRAIN CURRENT @ T_C = 25•C
PULSED DRAIN CURRENT @ T_C = 25•C
OPERATING AND STORAGE TEMPERATURE
THERMAL RESISTANCE, JUNCTION TO CASE
TOTAL DEVICE DISSIPATION @ T_C = 25•C
ALL RATINGS ARE AT T = 25¡ C UNLESS OTHERWISE SPECIFIED.
C
SYMBOL MIN. TYP. MAX.
UNITS
V_GS
-
-
–20
Volts
I_{D (on)}
-
-
75
Amps
I_DM
-
-
–300
Amps
T_OP/T_STG
-55
-
+150
•C
R_thJC
-
-
0.32
•C/W
P_D
-
-
390
Watts
ELECTRICAL CHARACTERISTICS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
V_GS = 0V, I_D = 250 mA
STATIC DRAIN TO SOURCE ON STATE RESISTANCE
V_GS = 10V, I_D = 37.5A
GATE THRESHOLD VOLTAGE
V_DS = V_GS, I_D = 4mA
FORWARD TRANSCONDUCTANCE
V_DS ˜ 10V, I_D = 75A
ZERO GATE VOLTAGE DRAIN CURRENT
V_DS = 0.8xMax. Rating, V_GS = 0V
V_DS = 0.8xMax. Rating, V_GS = 0V, T_C = 125•C
GATE TO SOURCE LEAKAGE FORWARD
GATE TO SOURCE LEAKAGE REVERSE
TURN ON DELAY TIME
RISE TIME
TURN OFF DELAY TIME
FALL TIME
V_GS = 20V
V_GS = -20V
V_DS = 0.5V,
I_D = 37.5A,
R_G = 2.0W,
V_GS = 10V
DIODE FORWARD VOLTAGE
T_C = 25•C, I_S = 75A,
V_GS = 0V
REVERSE RECOVERY TIME
T_J = 25•C
I_f = 25A, di/dt = 100A/msec, V_r = 25V
INPUT CAPACITANCE
V_GS = 0 V
OUTPUT CAPACITANCE
V_DS = 25 V
REVERSE TRANSFER CAPACITANCE
f = 1.0MHz
BV_DSS
R_DS(ON)
V_GS(th)
g_fs
I_DSS
I_GSS
t_d(ON)
t_r
t_d(OFF)
t_f
V_SD
t_rr
C_iss
C_oss
C_rss
100
-
-
-
-
0.025
2.0
-
4.0
25
30
-
-
-
250
-
1.0
-
-
100
-100
-
20
30
60
110
80
110
60
90
-
-
1.75
-
-
200
-
4500
-
1600
800
Volts
W
Volts
S(1/W)
mA
mA
nA
nsec
Volts
nsec
pF
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