SHD225515 Datasheet, PDF (1/3 Pages) Sensitron – HERMETIC POWER MOSFET N-CHANNEL

SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 2027, REV. A
HERMETIC POWER MOSFET
N-CHANNEL
SHD225515
DESCRIPTION: A 600 VOLT, 16 AMP, 0.40 OHM MOSFET IN A HERMETIC TO-254 PACKAGE.
MAXIMUM RATINGS
ALL
RATINGS
ARE
AT
T
A
=
25•C
UNLESS
OTHERWISE
SPECIFIED.
RATING
SYMBOL MIN. TYP. MAX.
UNITS
GATE TO SOURCE VOLTAGE
V_GS
-
-
–20
Volts
CONTINUOUS DRAIN CURRENT V_GS=10V, T_C = 25•C
I_D
V_GS=10V, T_C = 100•C
-
-
16
Amps
10
PULSED DRAIN CURRENT
@ T_C = 25•C
I_DM
-
-
52
Amps(pk)
OPERATING AND STORAGE TEMPERATURE
T_OP/T_STG
-55
-
+150
•C
THERMAL RESISTANCE JUNCTION TO CASE
R _JC
-
-
1.0
•C/W
TOTAL DEVICE DISSIPATION @ T_C = 25•C
P_D
-
-
125
Watts
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
DRAIN TO SOURCE BREAKDOWN VOLTAGE
V_GS = 0V, I_D = 250mA
GATE THRESHOLD VOLTAGE V_DS = V_GS, I_D = 250mA
DRAIN TO SOURCE ON STATE RESISTANCE
I_D = 5.5A, V_GS = 10V@T_J = 25•C
FORWARD TRANSCONDUCTANCE
V_DS = 2Vdc, I_D = 5.5A
ZERO GATE VOLTAGE DRAIN CURRENT
V_DS = 600Vdc, V_GS = 0Vdc
V_DS = 480V, V_GS = 0Vdc, T_J = 125•C
GATE TO BODY LEAKAGE CURRENT V_GS = –20Vdc,
V_DS = 0Vdc
TOTAL GATE CHARGE
V_GS = 10Vdc,
GATE TO SOURCE CHARGE
V_DS = 360Vdc,
GATE TO DRAIN CHARGE
I_D = 16Adc
TURN ON DELAY TIME
V_DD = 210V,
RISE TIME
I_D = 7.0Adc,
TURN OFF DELAY TIME
V_GS = 10 Vdc,
FALL TIME
R_G = 5.0W, R_D = 30W
INPUT CAPACITANCE
T_J = 150•C, V_DS = 25 Vdc,
OUTPUT CAPACITANCE
V_GS = 0 Vdc,
REVERSE TRANSFER CAPACITANCE
f = 1 MHz
FORWARD VOLTAGE
I_S = 16Adc, V_GS = 0V
REVERSE RECOVERY TIME
I_F = 16Adc,
REVERSE RECOVERY CHARGE di/dt = 100A/msec
SYMBOL
BV_DSS
V_GS(th)
R_DS(ON)
g_fs
I_DSS
I_GSS
Q_g
Q_gs
Q_gd
t_d(ON)
t_r
t_d(ON)
t_f
C_iss
C_oss
C_rss
V_SD
t_rr
Q_rr
MIN.
600
2.0
-
5.0
-
-
-
-
-
-
-
TYP.
-
-
-
-
0.1
0.2
-
-
19
54
110
56
3900
440
98
-
700
6.6
MAX.
-
4.0
0.40
-
0.25
1.0
+100
-100
210
26
110
-
-
1.4
-
UNITS
Volts
Volts
W
S(1/W)
mA
nA
nC
nsec
pF
Volts
nsec
mC
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