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SHD225512 Datasheet, PDF (1/3 Pages) Sensitron – HERMETIC POWER MOSFET N-CHANNEL
SENSITRON
SEMICONDUCTOR
SHD225512
TECHNICAL DATA
DATA SHEET 1063, REV. B
HERMETIC POWER MOSFET
N-CHANNEL
FEATURES:
• 100 Volt, 0.035 Ohm, 55A MOSFET
• Electrically Isolated, Hermetically Sealed
• Electrically Equivalent to OM55N10SA
MAXIMUM RATINGS
ALL RATINGS ARE AT T = 25°C UNLESS OTHERWISE SPECIFIED.
A
RATING
SYMBOL MIN. TYP. MAX.
GATE TO SOURCE VOLTAGE
VGS
-
-
±20
CONTINUOUS DRAIN CURRENT¬ VGS=10V, TC = 25°C
ID
VGS=10V, TC = 100°C
PULSED DRAIN CURRENT-
@ TC = 25°C
IDM
-
-
55
33
-
-
180
OPERATING AND STORAGE TEMPERATURE
TOP/ TSTG
-55
-
+150
TERMAL RESISTANCE JUNCTION TO CASE
TOTAL DEVICE DISSIPATION @ TC = 25°C
RθJC
-
-
0.43
PD
-
-
290
UNITS
Volts
Amps
Amps
°C
°C/W
Watts
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
SYMBOL MIN. TYP. MAX.
DRAIN TO SOURCE BREAKDOWN VOLTAGE
BVDSS
100
-
-
VGS = 0V, ID = 250µA
DRAIN TO SOURCE ON STATE RESISTANCE
-
-
VGS = 10V, ID = 30 Adc
TC = 100°C
RDS(ON)
0.035
0.07
GATE THRESHOLD VOLTAGE VDS = VGS, ID = 250µA
VGS(t h)
2.0
-
4.0
FORWARD TRANSCONDUCTANCE
gfs
25
-
-
VDS > ID (on), ID = 30 Adc
ZERO GATE VOLTAGE DRAIN CURRENT
-
-
VDS = Max. Rating, VGS = 0V
IDSS
VDS = Max. Rating x 0.8
250
1000
VGS = 0V, TJ = 125°C
GATE TO SOURCE LEAKAGE FORWARD VGS = -20V
IGSS
-
-
-100
GATE TO SOURCE LEAKAGE REVERSE VGS = 20V
100
TOTAL GATE CHARGE
VGS = 10V,
VDS = Max. Rating x 0.8,
Qg
ID = 30A
-
-
120
OFF VOLTAGE RISE TIME
FALL TIME
CROSSOVER TIME
VDD = 80V,
Tr(Voff)
-
200
-
ID = 30A,
tf
210
RG = 50Ω,
tcross
410
VGS = 10V
DIODE FORWARD VOLTAGE
TJ = 25°C, ISD = 55A,
VSD
VGS = 0V
-
-
1.5
TJ = 125°C
DIODE REVERSE RECOVERY TIME
REVERSE RECOVERY CHARGE
TJ = 25°C,
trr
IS = 55A,
-
180
-
diS/dt = -100A/µsec
VR = 80 V
Qrr
1.8
INPUT CAPACITANCE
VGS = 0 V,
Ciss
OUTPUT CAPACITANCE
VDS = 25 V,
Coss
REVERSE TRANSFER CAPACITANCE
f = 1.0MHz
Crss
-
4000
-
1100
250
¬ Package Limited: ID = 25A @ 25°C - Pulse Test: Pulse width 300µs. Duty Cycle 1.5%
UNITS
Volts
Ω
Volts
S(1/ Ω )
µA
nA
nC
nsec
Volts
nsec
µC
pF
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