SHD225509 Datasheet, PDF (1/2 Pages) Sensitron – HERMETIC POWER MOSFET N-CHANNEL

SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 4964, REV. -
SHD225509
SHDC225509
SHDG225509
HERMETIC POWER MOSFET
N-CHANNEL
FEATURES:
• 1000 Volt, 6A, 2 Ohm, MOSFET
• Isolated Hermetic Metal Package
• Fast intrinsic Rectifier
• Low R_{DS (on)}
• Ceramic Seals with Glidcop leads (SHDG225509)
MAXIMUM RATINGS
RATING
GATE TO SOURCE VOLTAGE
ON-STATE DRAIN CURRENT @ T_C = 25°C
PULSED DRAIN CURRENT @ T_C = 25°C
OPERATING AND STORAGE TEMPERATURE
THERMAL RESISTANCE, JUNCTION TO CASE
TOTAL DEVICE DISSIPATION @ T_C = 25°C
ALL RATINGS ARE AT T = 25°C UNLESS OTHERWISE SPECIFIED.
C
SYMBOL MIN. TYP. MAX.
UNITS
V_GS
-
-
±20
Volts
I_{D (on)}
-
-
6
Amps
I_DM
-
-
±24
Amps
T_OP/T_STG
-55
-
+150
°C
R_thJC
-
-
0.72
°C/W
P_D
-
-
150
Watts
ELECTRICAL CHARACTERISTICS
RATING
DRAIN TO SOURCE BREAKDOWN VOLTAGE
V_GS = 0V, I_D = 1mA
STATIC DRAIN TO SOURCE ON STATE RESISTANCE
V_GS = 10V, I_D = 3A
GATE THRESHOLD VOLTAGE V_DS = V_GS, I_D = 250µA
FORWARD TRANSCONDUCTANCE
V_DS = 10V, I_D = 3A
ZERO GATE VOLTAGE DRAIN CURRENT
V_DS = 0.8xMax. Rating, V_GS = 0V
V_DS = 0.8xMax. Rating, V_GS = 0V, T_J = 125°C
GATE TO SOURCE LEAKAGE FORWARD V_GS = 20V
GATE TO SOURCE LEAKAGE REVERSE V_GS = -20V
TURN ON DELAY TIME
V_DS = 500V,
RISE TIME
I_D = 3A,
TURN OFF DELAY TIME
R_G = 4.7Ω,
FALL TIME
V_GS = 10V
DIODE FORWARD VOLTAGE
T_C = 25°C, I_S = 6A,
V_GS = 0V
REVERSE RECOVERY TIME
T_J = 25°C
I_F = 6A, -di/dt = 100A/µsec, V_R = 100V
INPUT CAPACITANCE
V_GS = 0 V
OUTPUT CAPACITANCE
V_DS = 25 V
REVERSE TRANSFER CAPACITANCE
f = 1.0MHz
SYMBOL
BV_DSS
R_DS(ON)
V_GS(th)
g_fs
I_DSS
I_GSS
t_d(ON)
t_r
t_d(OFF)
t_f
V_SD
t_rr
C_iss
C_oss
C_rss
MIN.
1000
-
2.0
-
-
-
-
-
-
-
TYP.
-
-
-
6
-
-
-
35
40
100
60
-
-
2600
180
45
MAX.
-
2.0
4.5
-
250
1.0
100
-100
-
1.5
250
-
UNITS
Volts
Ω
Volts
S(1/Ω)
µA
mA
nA
nsec
Volts
nsec
pF
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