SHD225508 Datasheet, PDF (1/3 Pages) Sensitron – HERMETIC POWER MOSFET N-CHANNEL

SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 229, REV. A
HERMETIC POWER MOSFET
N-CHANNEL
FEATURES:
œ 1000 Volt, 2.0 Ohm, 6.0A MOSFET
œ Isolated Hermetic Metal Package
œ Fast Switching
œ Low R_{DS (on)}
SHD225508
MAXIMUM RATINGS
ALL
RATINGS
ARE
AT
T
C
=
25•C
UNLESS
OTHERWISE
SPECIFIED.
RATING
SYMBOL MIN. TYP. MAX.
UNITS
GATE TO SOURCE VOLTAGE
V_GS
-
-
–20
Volts
ON-STATE DRAIN CURRENT
I_D
-
-
6.0
Amps
PULSED DRAIN CURRENT
I_DM
-
-
24
Amps
OPERATING AND STORAGE TEMPERATURE
T_J/T_STG
-55
-
+150
•C
TOTAL DEVICE DISSIPATION
P_D
-
-
150
Watts
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
DRAIN TO SOURCE BREAKDOWN VOLTAGE
V_GS = 0V, I_D = 3.0 mA
STATIC DRAIN TO SOURCE ON STATE RESISTANCE
V_GS = 10V, I_D = 3.0A
GATE THRESHOLD VOLTAGE V_DS = V_GS, I_D = 2.5mA
FORWARD TRANSCONDUCTANCE
V_DS = 10V, I_D = 3.0A
ZERO GATE VOLTAGE DRAIN CURRENT
V_DS = 0.8 x Max. rating, V_GS = 0V, T_J = 25•C
T_J = 125•C
GATE TO SOURCE LEAKAGE FORWARD V_GS = 20V
GATE TO SOURCE LEAKAGE REVERSE V_GS = -20V
TURN ON DELAY TIME
V_DD = 500V,
RISE TIME
I_D = 3.0A
TURN OFF DELAY TIME
V_GS=10V
FALL TIME
R_G = 4.7W
DIODE FORWARD VOLTAGE
I_S = 6.0A, V_GS = 0V
Pulse test, t ˆ 300 ms, duty cycle d ˆ 2 %
REVERSE RECOVERY TIME
T_J = 25•C,
IF=6.0A, V_DD = 100V
di/dt = 100A/msec
INPUT CAPACITANCE
OUTPUT CAPACITANCE
REVERSE TRANSFER CAPACITANCE
V_GS = 0 V
V_DS = 25 V
f = 1.0MHz
THERMAL RESISTANCE, JUNCTION TO CASE
SYMBOL
BV_DSS
R_DS(ON)
V_GS(th)
g_fs
I_DSS
I_GSS
t_d(ON)
t_r
t_d(OFF)
t_f
V_SD
t_rr
C_iss
C_oss
C_rss
R_thJC
MIN.
1000
-
2.0
4.0
-
-
-
-
-
-
-
TYP.
-
-
-
6.0
-
-
35
40
100
60
-
-
2600
180
45
-
MAX.
-
2.0
4.5
-
250
1000
100
-100
1.5
250
-
0.83
UNITS
Volts
W
Volts
S(1/W)
mA
nA
nsec
Volts
nsec
pF
•C/W
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