SHD225505 Datasheet, PDF (1/3 Pages) Sensitron – HERMETIC POWER MOSFET N-CHANNEL

SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 359, REV. A
Formerly Part Number -- SHD22512
SHD225505
HERMETIC POWER MOSFET
N-CHANNEL
DESCRIPTION: A 500 VOLT, 0.415 OHM, 12A MOSFET IN A HERMETIC TO-254 PACKAGE.
Electrically Equivalent to IRFC450
MAXIMUM RATINGS
ALL RATINGS ARE AT T_A = 25•C UNLESS OTHERWISE SPECIFIED.
RATING
SYMBOL MIN. TYP. MAX.
UNITS
GATE TO SOURCE VOLTAGE
V_GS
-
-
–20
Volts
CONTINUOUS DRAIN CURRENT
@ T_C = 25•C
I_D
-
-
12
Amps
PULSED DRAIN CURRENT
@ T_C = 25•C
I_DM
-
-
48
Amps(pk)
OPERATING AND STORAGE TEMPERATURE
T_OP/T_STG
-55
-
+150
•C
TERMAL RESISTANCE JUNCTION TO CASE
R _JC
-
-
0.83
•C/W
TOTAL DEVICE DISSIPATION @ T_C = 25•C
P_D
-
-
150
Watts
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
DRAIN TO SOURCE BREAKDOWN VOLTAGE
V_GS = 0V, I_D = 250mA
GATE THRESHOLD VOLTAGE V_DS = V_GS, I_D = 250mA
DRAIN TO SOURCE ON STATE RESISTANCE
V_GS = 10Vdc, I_D = 8.0A
PULSE TEST, t ˆ 300 ms, DUTY CYCLE d ˆ 2%
ZERO GATE VOLTAGE DRAIN CURRENT
V_DS = Max. Rating, V_GS = 0Vdc
V_DS = 0.8xMax. Rating
V_GS = 0Vdc, T_J = 125•C
GATE TO BODY LEAKAGE CURRENT V_GS = –20Vdc,
SYMBOL
BV_DSS
V_GS(TH)
R_DS(ON)
I_DSS
I_GSS
TOTAL GATE CHARGE
GATE TO SOURCE CHARGE
GATE TO DRAIN CHARGE
V_GS = 10 Vdc
V_DS = 0.5V Max. Rating,
I_D = 12A
TURN ON DELAY TIME
RISE TIME
TURN OFF DELAY TIME
FALL TIME
V_DD = 250V,
I_D = 12A,
R_G = 2.35W
FORWARD VOLTAGE
I_S = 12A, V_GS = 0V
PULSE TEST, t ˆ 300 ms, DUTY CYCLE d ˆ 2%
REVERSE RECOVERY TIME
I_F = 12A
REVERSE RECOVERY CHARGE
di/dt = 100A/msec
V_DD ˆ 50V
INPUT CAPACITANCE
OUTPUT CAPACITANCE
REVERSE TRANSFER CAPACITANCE
V_DS = 25 Vdc,
V_GS = 0 Vdc,
f = 1 MHz
DRAIN TO CASE CAPACITANCE
Q_g
Q_gs
Q_gd
t_d(ON)
t_r
t_d(OFF)
t_f
V_SD
t_rr
Q_rr
C_iss
C_oss
C_rss
C_DC
MIN.
500
2.0
-
-
-
55
5.0
27
-
-
-
-
-
TYP.
-
-
-
-
-
-
-
-
-
-
2700
600
240
12
MAX.
-
4.0
0.415
25
250
–100
120
19
70
35
190
170
130
1.7
1600
14
-
UNITS
Volts
Volts
W
mA
nA
nC
nsec
Volts
nsec
mC
pF
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