SHD225503 Datasheet, PDF (1/3 Pages) Sensitron – HERMETIC POWER MOSFET N-CHANNEL

SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 665, REV -
Formerly Part Number SHD22510
SHD225503
HERMETIC POWER MOSFET
N-CHANNEL
DESCRIPTION: 200 VOLT, 0.105 OHM, 27.4 A MOSFET IN A HERMETIC TO-254 PACKAGE.
MAXIMUM RATINGS
RATING
ALL RATINGS ARE AT T_A = 25•C UNLESS OTHERWISE SPECIFIED.
SYMBOL MIN. TYP. MAX.
UNITS
GATE TO SOURCE VOLTAGE
V_GS
-
-
–20
Volts
CONTINUOUS DRAIN CURRENT V_GS=10V, T_C = 25•C
I_D
V_GS=10V, T_C = 100•C
-
-
27.4
Amps
17
PULSED DRAIN CURRENT
@ T_C = 25•C
I_DM
-
-
110
Amps
OPERATING AND STORAGE TEMPERATURE
T_OP/T_STG
-55
-
150
•C
TERMAL RESISTANCE JUNCTION TO CASE
R¡ _JC
-
-
0.83
•C/W
TOTAL DEVICE DISSIPATION @ T_C = 25•C
P_D
-
-
150
Watts
ELECTRICAL CHARACTERISTICS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
V_GS = 0V, I_D = 1.0mA
DRAIN TO SOURCE ON STATE RESISTANCE
V_GS = 10V, I_D = 17A
V_GS = 10V, I_D = 27.4A
GATE THRESHOLD VOLTAGE V_DS = V_GS, I_D = 250mA
FORWARD TRANSCONDUCTANCE
V_DS ˜ 15V, I_DS = 17A
ZERO GATE VOLTAGE DRAIN CURRENT
V_DS = 0.8xMax. Rating, V_GS = 0V
V_DS = 0.8xMax. Rating
V_GS = 0V, T_J = 125•C
GATE TO SOURCE LEAKAGE FORWARD @ RATED
GATE TO SOURCE LEAKAGE REVERSE
V_GS
TOTAL GATE CHARGE
V_GS = 10 VOLTS
GATE TO SOURCE CHARGE
50% RATED V_DS
GATE TO DRAIN CHARGE
RATED I_D
TURN ON DELAY TIME
V_DD = 100V
RISE TIME
RATED I_D
TURN OFF DELAY TIME
R_G = 2.35W
FALL TIME
DIODE FORWARD VOLTAGE T_J = 25•C, I_S = 27.4A,
V_GS = 0V
DIODE REVERSE RECOVERY TIME T_J = 25•C
REVERSE RECOVERY CHARGE
I_f = RATED ID
di/dt = 100A/sec
INPUT CAPACITANCE
V_GS = 0 VOLTS
OUTPUT CAPACITANCE
V_DS = 25 VOLTS
REVERSE TRANSFER CAPACITANCE
f = 1 MHz
BV_DSS
R_DS(ON)
V_GS(th)
g_fs
I_DSS
I_GSS
Q_g
Q_gs
Q_gd
t_d(ON)
t_r
t_d(ON)
t_f
V_SD
t_rr
Q_rr
C_iss
C_oss
C_rss
200
-
-
-
-
0.100
0.105
2.0
-
4.0
9.0
-
-
-
-
25
250
-
-
100
-100
55
-
115
8.0
22
30
60
-
-
35
190
170
130
-
-
1.9
-
-
950
9.0
-
3500
-
700
110
Volts
W
Volts
S(1/W)
mA
nA
nC
nsec
Volts
nsec
mC
pF
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