SHD225456 Datasheet, PDF (1/3 Pages) Sensitron – HERMETIC POWER MOSFET N-CHANNEL

SENSITRON
SEMICONDUCTOR
SHD225456
TECHNICAL DATA
DATA SHEET 4103, REV. -
HERMETIC POWER MOSFET
N-CHANNEL
FEATURES:
œ 100 Volt, 0.03 Ohm, 35A MOSFET
œ Fast Switching
œ Low R_{DS (on)}
œ Electrically Equivalent to IRF3710
œ Add an “S” to the end of the part number for S-100 screening, SHD225456S
œ Add a “C” to the part number for ceramic seals, SHDC225456
MAXIMUM RATINGS
ALL RATINGS ARE AT T_C = 25•C UNLESS OTHERWISE SPECIFIED.
RATING
SYMBOL MIN. TYP. MAX.
UNITS
GATE TO SOURCE VOLTAGE
V_GS
-
-
–20
Volts
CONTINUOUS DRAIN CURRENT V_GS=10V, T_C = 25•C
I_D
V_GS=10V, T_C = 100•C
-
-
35
Amps
29
OPERATING AND STORAGE TEMPERATURE
T_OP/T_STG
-55
-
+150
•C
THERMAL RESISTANCE, JUNCTION TO CASE
R_thJC
-
-
1.0
•C/W
TOTAL DEVICE DISSIPATION @ T_C = 25•C
P_D
-
-
125
Watts
ELECTRICAL CHARACTERISTICS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
V_GS = 0V, I_D = 250mA
STATIC DRAIN TO SOURCE ON STATE RESISTANCE
V_GS = 10V, I_D = 28A
GATE THRESHOLD VOLTAGE V_DS = V_GS, I_D = 250mA
FORWARD TRANSCONDUCTANCE
V_DS = 15V, I_DS = 28A
ZERO GATE VOLTAGE DRAIN CURRENT
V_DS = Max. Rating, V_GS = 0V
V_DS = 0.8xMax. Rating, V_GS = 0V, T_J = 125•C
GATE TO SOURCE LEAKAGE FORWARD V_GS = 20V
GATE TO SOURCE LEAKAGE REVERSE V_GS = -20V
TOTAL GATE CHARGE
V_GS = 10 V,
GATE TO SOURCE CHARGE
V_DS = 80 V,
GATE TO DRAIN CHARGE
I_D = 28A
TURN ON DELAY TIME
V_DD = 50V,
RISE TIME
I_D = 28A
TURN OFF DELAY TIME
R_G = 2.5W
FALL TIME
DIODE FORWARD VOLTAGE
T_j = 25•C, I_S = 28A
V_GS = 0V
REVERSE RECOVERY TIME
T_J = 25•C,
I_f = 28A
di_F/ds = 100A/msec
INPUT CAPACITANCE
V_GS = 0 V
OUTPUT CAPACITANCE
V_DS = 25 V
REVERSE TRANSFER CAPACITANCE f = 1.0MHz
BV_DSS
R_DS(ON)
V_GS(th)
g_fs
I_DSS
I_GSS
Q_g
Q_gs
Q_gd
t_d(ON)
t_r
t_d(OFF)
t_f
V_SD
t_rr
Q_rr
C_iss
C_oss
C_rss
100
-
-
-
-
0.03
2.0
-
4.0
20
-
-
-
-
25
250
-
-
100
-100
-
-
200
28
94
-
-
22
105
75
60
-
-
1.3
-
-
280
-
2.0
-
2920
-
670
340
Volts
W
Volts
S(1/W)
mA
nA
nC
nsec
Volts
nsec
mC
pF
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