SHD225452 Datasheet, PDF (1/3 Pages) Sensitron – HERMETIC POWER MOSFET P-CHANNEL

SENSITRON
SEMICONDUCTOR
SHD225452
TECHNICAL DATA
DATA SHEET 4102, REV. -
HERMETIC POWER MOSFET
P-CHANNEL
FEATURES:
œ -100 Volt, 0.07 Ohm, -34A MOSFET
œ Fast Switching
œ Low R_{DS (on)}
œ Electrically Equivalent to IRF5210
œ Add an “S” to the end of the part number for S-100 screening, SHD225452S
œ Add a “C” to the part number for ceramic seals, SHDC225452
MAXIMUM RATINGS
ALL RATINGS ARE AT T_C = 25•C UNLESS OTHERWISE SPECIFIED.
RATING
SYMBOL MIN. TYP. MAX.
UNITS
GATE TO SOURCE VOLTAGE
V_GS
-
-
–20
Volts
CONTINUOUS DRAIN CURRENT V_GS=-10V, T_C = 25•C
I_D
V_GS=-10V, T_C = 100•C
-
-
-34
Amps
-21
OPERATING AND STORAGE TEMPERATURE
T_OP/T_STG
-55
-
+150
•C
THERMAL RESISTANCE, JUNCTION TO CASE
R_thJC
-
-
1.0
•C/W
TOTAL DEVICE DISSIPATION @ T_C = 25•C
P_D
-
-
125
Watts
ELECTRICAL CHARACTERISTICS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
V_GS = 0V, I_D = -250mA
STATIC DRAIN TO SOURCE ON STATE RESISTANCE
V_GS = -10V, I_D = -21A
GATE THRESHOLD VOLTAGE V_DS = V_GS, I_D = -250mA
FORWARD TRANSCONDUCTANCE
V_DS = -15V, I_DS = -21A
ZERO GATE VOLTAGE DRAIN CURRENT
V_DS = Max. Rating, V_GS = 0V
V_DS = 0.8xMax. Rating, V_GS = 0V, T_J = 125•C
GATE TO SOURCE LEAKAGE FORWARD V_GS = 20V
GATE TO SOURCE LEAKAGE REVERSE V_GS = -20V
TOTAL GATE CHARGE
V_GS = -10 V,
GATE TO SOURCE CHARGE
V_DS = -80 V,
GATE TO DRAIN CHARGE
I_D = -21A
TURN ON DELAY TIME
V_DD = -50V,
RISE TIME
I_D = -21A
TURN OFF DELAY TIME
R_G = 2.5W
FALL TIME
DIODE FORWARD VOLTAGE
T_j = 25•C, I_S = -21A
V_GS = 0V
REVERSE RECOVERY TIME
T_J = 25•C,
I_f = -21A
di_F/ds = 100A/msec
INPUT CAPACITANCE
V_GS = 0 V
OUTPUT CAPACITANCE
V_DS = -25 V
REVERSE TRANSFER CAPACITANCE f = 1.0MHz
BV_DSS
R_DS(ON)
V_GS(th)
g_fs
I_DSS
I_GSS
Q_g
Q_gs
Q_gd
t_d(ON)
t_r
t_d(OFF)
t_f
V_SD
t_rr
Q_rr
C_iss
C_oss
C_rss
-100
-
-
-
-2.0
-
10
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
2730
824
465
-
0.07
-4.0
-
-25
-250
100
-100
180
25
100
28
150
100
120
-1.6
260
1.8
-
Volts
W
Volts
S(1/W)
mA
nA
nC
nsec
Volts
nsec
mC
pF
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