SHD225413 Datasheet, PDF (1/3 Pages) Sensitron – HERMETIC POWER MOSFET N-CHANNEL

SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 693, REV. -
SHD225413
HERMETIC POWER MOSFET
N-CHANNEL
(PRELIMINARY)
DESCRIPTION: 30 VOLT, 35 AMP, 0.012 OHM MOSFET IN A HERMETIC TO-254 PACKAGE.
MAXIMUM RATINGS
ALL
RATINGS
ARE
AT
T
A
=
25•C
UNLESS
OTHERWISE
SPECIFIED.
RATING
SYMBOL MIN. TYP. MAX.
UNITS
GATE TO SOURCE VOLTAGE
V_GS
-
-
–15
Volts
CONTINUOUS DRAIN CURRENT V_GS=10V, T_C = 25•C
I_D
V_GS=10V, T_C = 100•C
-
-
35
Amps
35
PULSED DRAIN CURRENT
@ T_C = 25•C
I_DM
-
-
200 Amps(pk)
OPERATING AND STORAGE TEMPERATURE
T_OP/T_STG
-55
-
+150
•C
TERMAL RESISTANCE JUNCTION TO CASE
R¡ _JC
-
-
1.0
•C/W
TOTAL DEVICE DISSIPATION @ T_C = 25•C
P_D
-
-
125
Watts
ELECTRICAL CHARACTERISTICS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
BV_DSS
30
-
-
Volts
V_GS = 0V, I_D = 250mA
DRAIN TO SOURCE ON STATE RESISTANCE
I_D = 17.5A, V_GS = 5.0V@T_J = 25•C RDS(ON)
-
6.0
12
mW
FORWARD TRANSCONDUCTANCE
g_fs
15
55
-
S(1/W)
V_DS = 3.0Vdc, I_DS = 17.5A
ZERO GATE VOLTAGE DRAIN CURRENT
-
.05
mA
V_DS = 30Vdc, V_GS = 0Vdc
I_DSS
10
V_DS = 30Vdc
100
V_GS = 0Vdc, T_J = 125•C
GATE TO BODY LEAKAGE CURRENT V_GS = –20Vdc,
I_GSS
-
-
+100
nA
V_DS = 0Vdc
-100
TOTAL GATE CHARGE
(V_GS = 5.0 Vdc,
Q_g
61
122
nC
GATE TO SOURCE CHARGE
V_DS = 24Vdc,
Q_gs
14
28
GATE TO DRAIN CHARGE
I_D = 35Adc)
Q_gd
33
66
TURN ON DELAY TIME
RISE TIME
TURN OFF DELAY TIME
(V_DS = 15V,
I_D = 35Adc,
V_GS = 5.0 Vdc,
FALL TIME
R_G = 4.7W)
FORWARD VOLTAGE,
(I_S = 4.7Adc, V_GS = 0V)
(I_S = 35Adc, V_GS = 0Vdc, T_J = 125•C)
REVERSE RECOVERY TIME (I_S = 35Adc, V_GS = 0Vdc
REVERSE RECOVERY CHARGE di/dt = 100A/msec)
INPUT CAPACITANCE
(V_DS = 25 Vdc,
OUTPUT CAPACITANCE
V_GS = 0 Vdc,
REVERSE TRANSFER CAPACITANCE
f = 1 MHz)
*Note: Current limited by pin diameter.
t_d(ON)
t_r
t_d(ON)
t_f
V_SD
t_rr
Q_rr
C_iss
C_oss
C_rss
-
24
48
493
986
60
120
149
300
-
0.97
1.1
0.87
-
58
-
.088
-
4025 5635
1353 1894
307
430
nsec
Volts
nsec
mC
pF
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