SHD225402 Datasheet, PDF (1/3 Pages) Sensitron – HERMETIC POWER MOSFET N-CHANNEL

SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 746, REV. -
SHD225402
HERMETIC POWER MOSFET
N-CHANNEL
FEATURES:
œ 100 Volt, 0.077 Ohm, 28A MOSFET
œ Isolated Hermetic Metal Package
œ Fast Switching
œ Low R_{DS (on)}
œ Equivalent to IRFM140 Series
œ Add Suffix ‘C’ to the Part Number for Ceramic Seals
MAXIMUM RATINGS
RATING
ALL
RATINGS
ARE
AT
T
C
=
25•C
UNLESS
OTHERWISE
SPECIFIED.
SYMBOL MIN. TYP. MAX.
UNITS
GATE TO SOURCE VOLTAGE
V_GS
-
-
–20
Volts
ON-STATE DRAIN CURRENT
@ T_C = 25•C
I_D
@ T_C = 100•C
-
-
28
Amps
-
-
20
PULSED DRAIN CURRENT
@ T_C = 25•C
I_DM
-
-
112
Amps
OPERATING AND STORAGE TEMPERATURE
T_OP/T_STG
-55
-
+150
•C
THERMAL RESISTANCE, JUNCTION TO CASE
R¡ _JC
-
-
0.88
•C/W
TOTAL DEVICE DISSIPATION @ T_C = 25•C
P_D
-
-
140
Watts
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
DRAIN TO SOURCE BREAKDOWN VOLTAGE
V_GS = 0V, I_D = 1.0mA
STATIC DRAIN TO SOURCE ON STATE RESISTANCE
V_GS = 10V, I_D = 20A
GATE THRESHOLD VOLTAGE V_DS = V_GS, I_D = 250mA
FORWARD TRANSCONDUCTANCE
V_DS ˜ 15V, I_D = 20A
ZERO GATE VOLTAGE DRAIN CURRENT
V_DS = 0.8xMax. Rating, V_GS = 0V
V_DS = 0.8xMax. Rating, V_GS = 0V, T_J = 125•C
GATE TO SOURCE LEAKAGE FORWARD V_GS = 20V
GATE TO SOURCE LEAKAGE REVERSE V_GS = -20V
TURN ON DELAY TIME
V_DD = 50V,
RISE TIME
I_D = 20A,
TURN OFF DELAY TIME
R_G = 9.1W
FALL TIME
DIODE FORWARD VOLTAGE
T_J = 25•C, I_S = 28A,
V_GS = 0V
REVERSE RECOVERY TIME
T_J = 25•C,
I_F = 28A,
di/ds = 100A/msec, V_DD ˆ 50V
INPUT CAPACITANCE
V_GS = 0 V
OUTPUT CAPACITANCE
V_DS = 25 V
REVERSE TRANSFER CAPACITANCE f = 1.0MHz
SYMBOL
BV_DSS
R_DS(ON)
V_GS(th)
g_fs
I_DSS
I_GSS
t_d(ON)
t_r
t_d(OFF)
t_f
V_SD
t_rr
C_iss
C_oss
C_rss
MIN.
100
-
2.0
9.1
-
-
-
-
-
-
TYP.
-
-
-
-
-
-
-
-
-
1600
550
120
MAX.
-
0.077
4.0
-
25
250
100
-100
21
145
64
105
1.5
400
-
UNITS
Volts
W
Volts
S(1/W)
mA
nA
nsec
Volts
nsec
pF
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