SHD224805 Datasheet, PDF (1/2 Pages) Sensitron – HERMETIC POWER MOSFET N-CHANNEL

SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 5159, REV. -
HERMETIC POWER MOSFET
N-CHANNEL
FEATURES:
• 600 Volt, 60A, 55 milli-Ohm
• Isolated Hermetic Metal Package
• Very low Gate Charge
• Very Low R_{DS (on)}
• Low package inductance-easy to drive and protect
SHD224805
MAXIMUM RATINGS
RATING
GATE TO SOURCE VOLTAGE
ON-STATE DRAIN CURRENT @ T_C = 25°C
PULSED DRAIN CURRENT @ T_C = 25°C
OPERATING AND STORAGE TEMPERATURE
THERMAL RESISTANCE, JUNCTION TO CASE
TOTAL DEVICE DISSIPATION @ T_C = 25°C
ALL RATINGS ARE AT T = 25°C UNLESS OTHERWISE SPECIFIED.
C
SYMBOL MIN. TYP. MAX.
UNITS
V_GS
-
-
±20
Volts
I_{D (on)}
-
-
60
Amps
I_DM
-
-
220
Amps
T_OP/T_STG
-55
-
+150
°C
R_thJC
-
-
0.36
°C/W
P_D
-
-
350
Watts
ELECTRICAL CHARACTERISTICS
RATING
DRAIN TO SOURCE BREAKDOWN VOLTAGE
V_GS = 0V, I_D = 250 μA
STATIC DRAIN TO SOURCE ON STATE RESISTANCE
V_GS = 10V, I_D = 44A
GATE THRESHOLD VOLTAGE V_DS = V_GS, I_D = 3mA
ZERO GATE VOLTAGE DRAIN CURRENT
V_DS = 600V, V_GS = 0V
V_DS = 0.8xMax. Rating, V_GS = 0V, T_J = 125°C
GATE TO SOURCE LEAKAGE FORWARD
GATE TO SOURCE LEAKAGE REVERSE
TURN ON DELAY TIME
RISE TIME
TURN OFF DELAY TIME
FALL TIME
DIODE FORWARD VOLTAGE
REVERSE RECOVERY TIME
V_GS = 20V
V_GS = -20V
V_DS = 400V,
I_D = 44A,
R_G = 3.3Ω,
V_GS = 10V
I_S = 44A,
V_GS = 0V
I_F = 44A, -di/dt = 100A/μsec, V_R = 100V
INPUT CAPACITANCE
V_GS = 0 V
OUTPUT CAPACITANCE
V_DS = 100 V
f = 1 MHz
GATE CHARGE
I_F = 44A, V_DS = 400 V, V_GS = 10V, R_G = 3.3Ω
SYMBOL
BV_DSS
R_DS(ON)
V_GS(th)
I_DSS
I_GSS
t_d(ON)
t_r
t_d(OFF)
t_f
V_SD
t_rr
C_iss
C_oss
Q_gs
Q_gd
Q_g
MIN.
600
-
2.0
-
-
-
-
-
-
-
TYP.
-
-
-
-
-
-
40
30
130
20
-
600
6800
320
34
51
150
MAX.
-
0.055
4.0
20
500
100
-100
-
1.35
-
-
-
-
190
UNITS
Volts
Ω
Volts
μA
μA
nA
nsec
Volts
nsec
pF
nC
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