SHD224605 Datasheet, PDF (1/3 Pages) Sensitron – HERMETIC POWER MOSFET N-CHANNEL

SENSITRON
SEMICONDUCTOR
SHD224605
SHD224606
TECHNICAL DATA
DATA SHEET 812, REV. -
HERMETIC POWER MOSFET
N-CHANNEL
(Standard and Fast-FET)
DESCRIPTION: A 500 VOLT, 24 AMP, 0.23 R_DS(ON) MOSFET IN A HERMETIC TO-258 PACKAGE.
SHD224605: Formerly SHD2243, N-Channel Enhancement Mode.
SHD224606: Formerly SHD2243F, N-Channel Enhancement Mode with Fast Intrinsic Diode.
MAXIMUM RATINGS
RATING
(AT Tj=25⁰C UNLESS OTHERWISE SPECIFIED).
SYMBOL
MIN
TYP
MAX
UNITS
CONTINUOUS DRAIN CURRENT
(V_DS = 10 V, T_C = 25⁰C)
OPERATING AND STORAGE TEMPERATURE RANGE
I_D
-
T_OP/T_STG
-55
-
24
Amps
+150
•C
THERMAL RESISTANCE JUNCTION TO CASE
TOTAL DEVICE POWER DISSIPATION @T_C = 25•C
ELECTRICAL CHARACTERISTICS
R _JC
-
-
0.32
•C/W
P_D
-
-
390
W
CHARACTERISTIC
SYMBOL
MIN
TYP
MAX
UNITS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
(V_GS = 0 V, I_D = 1.0 mA)
DRAIN TO SOURCE ON STATE RESISTANCE
(V_GS = 10 V, I_D = 12.0 A)
GATE THRESHOLD VOLTAGE
(V_DS = V_GS, I_D = 250mA)
FORWARD TRANSCONDUCTANCE
(V_DS=10V,I_DS = 12.0A)
ZERO GATE VOLTAGE DRAIN CURRENT
(V_DS = 400V)
(V_GS = 0V, TJ=125⁰C)
BV_DSS
500
-
-
Volts
R_DS(ON)
-
-
0.23
W
V_GS(th)
2.0
-
4.0
Volts
g_fs
11
21
-
S(1/W)
I_DSS
-
-
200
mA
-
-
1.0
mA
GATE TO SOURCE LEAKAGE
(V_GS = –20V_DC, V_DS = 0)
TOTAL GATE CHARGE
(V_GS = 10V, V_DS = 250V_, I_D = 12.0A)
INPUT CAPACITANCE
OUTPUT CAPACITANCE
REVERSE TRANSFER CAPACITANCE
(V_GS = 0V, V_DS = 25V, f = 1.0 MHz)
I_GSS
SHD224605
Q_g
SHD224606
C_iss
C_oss
C_rss
-
-
+/-
nA
100
-
-
190
nC
160
-
4200
-
-
450
-
pF
-
135
-
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