SHD224502 Datasheet, PDF (1/3 Pages) Sensitron – HERMETIC POWER MOSFET N-CHANNEL

SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 4156, Rev. –
HERMETIC POWER MOSFET
N-CHANNEL
SHD224502
FEATURES:
• 100 Volt, .07 Ohm, 30A MOSFET
• Isolated Hermetic Metal Package
• Fast Switching
• Low R_{DS (on)}
• Equivalent to IRFM150
MAXIMUM RATINGS
ALL RATINGS ARE AT T = 25°C UNLESS OTHERWISE SPECIFIED.
C
RATING
SYMBOL MIN. TYP. MAX.
UNITS
GATE TO SOURCE VOLTAGE
V_GS
-
-
±20
Volts
ON-STATE DRAIN CURRENT
I_D
-
-
34
Amps
PULSED DRAIN CURRENT
@ T_C = 25°C
I_DM
-
OPERATING AND STORAGE TEMPERATURE
T_J/T_STG
-55
-
136
-
+150
Amps
°C
TOTAL DEVICE DISSIPATION @
T_C = 25°C
P_D
-
-
150
Watts
ELECTRICAL CHARACTERISTICS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
BV_DSS
100
-
-
Volts
V_GS = 0V, I_D = 1.0
mA
STATIC DRAIN TO SOURCE ON STATE RESISTANCE
V_GS = 10V, I_D =
R_DS(ON)
-
-
0.07
Ω
21A
GATE THRESHOLD VOLTAGE V_DS = V_GS, I_D = 250µA
V_GS(th)
2.0
-
FORWARD TRANSCONDUCTANCE
V_DS ≥
g_fs
9.0
-
15V,
I_DS =
21A
4.0
Volts
S(1/ Ω )
-
ZERO GATE VOLTAGE DRAIN CURRENT
V_DS = 0.8 x Max. rating, V_GS =
I_DSS
-
-
25
µA
0V
250
T_J =
125°C
GATE TO SOURCE LEAKAGE FORWARD V_GS = 20V
I_GSS
-
-
100
nA
GATE TO SOURCE LEAKAGE REVERSE V_GS = -20V
-100
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