SHD220721 Datasheet, PDF (1/2 Pages) Sensitron – LOW RDS HERMETIC POWER MOSFET - P-CHANNEL

SENSITRON
SEMICONDUCTOR
SHD220721
TECHNICAL DATA
DATA SHEET 4324, REV. -
LOW R_DS HERMETIC POWER MOSFET - P-CHANNEL
FEATURES:
• 150 Volt, 0.1 Ohm, 7A MOSFET
• Isolated Hermetic Metal Package
• Ultra Low R_{DS (on)}
• Characterized at V_GS of 6V
MAXIMUM RATINGS
RATING
GATE TO SOURCE VOLTAGE
ON-STATE DRAIN CURRENT
PULSED DRAIN CURRENT
ALL RATINGS ARE AT T = 25°C UNLESS OTHERWISE SPECIFIED.
C
SYMBOL MIN. TYP. MAX.
UNITS
V_GS
-
-
±20
Volts
I_D25
-
-
-7
Amps
I_DM
-
-
- 50
Amps
OPERATING AND STORAGE TEMPERATURE
TOTAL DEVICE DISSIPATION
THERMAL RESISTANCE, JUNCTION TO CASE
T_J/T_STG
-55
-
+150
°C
P_D
-
-
40
Watts
R_θJC
-
-
3.1
°C/W
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
DRAIN TO SOURCE BREAKDOWN VOLTAGE
V_GS = 0V, I_D = - 250µA
STATIC DRAIN TO SOURCE ON STATE RESISTANCE
V_GS = - 10V, I_D = - 7A
V_GS = - 6V, I_D = - 5A
GATE THRESHOLD VOLTAGE V_DS = V_GS, I_D = - 250µA
FORWARD TRANSCONDUCTANCE
V_DS = - 15V, I_D = - 7A
ZERO GATE VOLTAGE DRAIN CURRENT
V_DS = 0.8 x Max. rating, V_GS = 0V, T_J = 25°C
T_J = 125°C
GATE TO SOURCE LEAKAGE FORWARD V_GS = 20V
GATE TO SOURCE LEAKAGE REVERSE V_GS = -20V
TURN ON DELAY TIME
V_DD = - 75V
RISE TIME
I_D = - 5A
TURN OFF DELAY TIME
V_GS= - 10V
FALL TIME
R_G = 6Ω
DIODE FORWARD VOLTAGE
I_F = - 5A, V_GS = 0V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
REVERSE RECOVERY TIME
T_J = 25°C,
I_F= - 3A, V_R = 100V
di/dt = 100A/µsec
TOTAL GATE CHARGE
GATE SOURCE CHARGE
GATE DRAIN CHARGE
V_DD = - 75V
I_D = - 5A
V_GS = - 10V
SYMBOL
BV_DSS
-
V_GS(th)
g_fs
I_DSS
I_GSS
t_d(ON)
t_r
t_d(OFF)
t_f
V_SD
t_rr
Q_g
Q_gs
Q_gd
MIN.
-150
-
-
-2
-
-
-
-
-
-
-
TYP.
-
0.09
0.10
-
19
-
-
25
46
115
64
0.9
100
88
18
27
MAX.
-
0.10
0.11
-4
-
-1
- 50
100
-100
40
70
180
100
1.2
150
-
UNITS
Volts
Ω
Volts
S(1/Ω)
µA
nA
nsec
Volts
nsec
nC
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