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SHD220301 Datasheet, PDF (1/3 Pages) Sensitron – HERMETIC POWER MOSFET N-CHANNEL | |||
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SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 4068, REV -
HERMETIC POWER MOSFET
N-CHANNEL
FEATURES:
 55 Volt, 0.04 Ohm MOSFET
 Hermetically Sealed
 Add a âCâ after the SHD for ceramic seals (SHDC220301)
 Surface Mount Package
SHD220301
MAXIMUM RATINGS
ALL
RATINGS
ARE
AT
T
A
=
25ÂC
UNLESS
OTHERWISE
SPECIFIED.
RATING
SYMBOL MIN. TYP. MAX.
UNITS
GATE TO SOURCE VOLTAGE
VGS
-
-
Â20
Volts
CONTINUOUS DRAIN CURRENT VGS = 10V, TC = 25ÂC
ID
VGS = 10V, TC = 100ÂC
-
-
22
Amps
16
PULSED DRAIN CURRENT
@ TC = 25ÂC
IDM
-
-
88
Amps
OPERATING AND STORAGE TEMPERATURE
TOP/TSTG
-55
-
+175
ÂC
TERMAL RESISTANCE JUNCTION TO CASE
R¡ JC
-
-
3.1
ÂC/W
TOTAL DEVICE DISSIPATION @ TC = 25ÂC
PD
-
-
40
Watts
ELECTRICAL CHARACTERISTICS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
BVDSS
55
-
-
VGS = 0V, ID = 250 mA
DRAIN TO SOURCE ON STATE RESISTANCE
-
-
VGS = 10V, ID = 16A
RDS(ON)
0.04
GATE THRESHOLD VOLTAGE VDS = VGS, ID = 250mA
VGS(th)
2.0
-
4.0
FORWARD TRANSCONDUCTANCE
gfs
8
-
-
VDS = VGS, ID = 16A
ZERO GATE VOLTAGE DRAIN CURRENT, TJ = 25ÂC
IDSS
-
-
25
(VDS = 55V, VGS = 0V), TJ = 125ÂC
250
GATE TO SOURCE LEAKAGE FORWARD VGS = 20V
IGSS
-
-
100
GATE TO SOURCE LEAKAGE REVERSE VGS = -20V
-100
TOTAL GATE CHARGE
VGS = 10V,
Qg
-
-
34
GATE TO SOURCE CHARGE
VDS = 44V,
Qgs
7
GATE TO DRAIN CHARGE
ID = 16A
Qgd
14
TURN ON DELAY TIME
VDD = 28V,
td(ON)
-
-
12
RISE TIME
ID = 22A,
tr
28
TURN OFF DELAY TIME
RG = 13W,
td(OFF)
30
FALL TIME
VGS = 10V
tf
30
DIODE FORWARD VOLTAGE
TJ = 25ÂC,IS = 22A
VSD
-
-
1.6
VGS = 0V
REVERSE RECOVERY TIME
TJ = 25ÂC,
trr
-
57
86
IS = 22A,
di/dt  100A/msec,
REVERSE RECOVERY CHARGE
VDD Â 25V
Qrr
-
130
200
INPUT CAPACITANCE
VGS = 0V, VDS = 25V,
Ciss
-
700
-
OUTPUT CAPACITANCE
f = 1.0MHz
Coss
250
REVERSE TRANSFER CAPACITANCE
Crss
100
Volts
W
Volts
S(1/W)
mA
nA
nC
nsec
Volts
nsec
mC
pF
221 WEST INDUSTRY COURT DEER PARK, NY 11729-4681 PHONE (631) 586-7600 FAX (631) 242-9798
World Wide Web - http://www.sensitron.com E-mail Address - sales@sensitron.com
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