SHD220213 Datasheet, PDF (1/3 Pages) Sensitron – HERMETIC POWER MOSFET N-CHANNEL LOGIC LEVEL

SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 4139, REV -
HERMETIC POWER MOSFET
N-CHANNEL LOGIC LEVEL
FEATURES:
œ 55 Volt, 0.06 Ohm MOSFET
œ Hermetically Sealed
œ Add a “C” to the part number for ceramic seals (SHDC220213)
œ Surface Mount Package
SHD220213
MAXIMUM RATINGS
ALL
RATINGS
ARE
AT
T
A
=
25•C
UNLESS
OTHERWISE
SPECIFIED.
RATING
SYMBOL MIN. TYP. MAX.
UNITS
GATE TO SOURCE VOLTAGE
V_GS
-
-
–16
Volts
CONTINUOUS DRAIN CURRENT V_GS = 10V, T_C = 25•C
I_D
V_GS = 10V, T_C = 100•C
-
-
17
Amps
11
PULSED DRAIN CURRENT
@ T_C = 25•C
I_DM
-
-
68
Amps
OPERATING AND STORAGE TEMPERATURE
T_OP/T_STG
-55
-
+175
•C
TERMAL RESISTANCE JUNCTION TO CASE
R¡ _JC
-
-
3.5
•C/W
TOTAL DEVICE DISSIPATION @ T_C = 25•C
P_D
-
-
35
Watts
ELECTRICAL CHARACTERISTICS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
V_GS = 0V, I_D = 250 mA
DRAIN TO SOURCE ON STATE RESISTANCE
V_GS = 10V, I_D = 11A
V_GS = 5V, I_D = 11A
GATE THRESHOLD VOLTAGE V_DS = V_GS, I_D = 250mA
FORWARD TRANSCONDUCTANCE
V_DS = 25V, I_D = 11A
ZERO GATE VOLTAGE DRAIN CURRENT, T_J = 25•C
(V_DS = 55V, V_GS = 0V), T_J = 125•C
GATE TO SOURCE LEAKAGE FORWARD V_GS = 16V
GATE TO SOURCE LEAKAGE REVERSE V_GS = -16V
TOTAL GATE CHARGE
V_GS = 5V,
GATE TO SOURCE CHARGE
V_DS = 44V,
GATE TO DRAIN CHARGE
I_D = 11A
TURN ON DELAY TIME
V_DD = 28V,
RISE TIME
I_D = 11A,
TURN OFF DELAY TIME
R_G = 12W,
FALL TIME
V_GS = 5V
DIODE FORWARD VOLTAGE
T_J = 25•C,I_S = 11A
V_GS = 0V
REVERSE RECOVERY TIME
T_J = 25•C,
I_S = 11A,
di/dt ˆ 100A/msec,
REVERSE RECOVERY CHARGE
V_DD ˆ 25V
INPUT CAPACITANCE
V_GS = 0V, V_DS = 25V,
OUTPUT CAPACITANCE
f = 1.0MHz
REVERSE TRANSFER CAPACITANCE
BV_DSS
R_DS(ON)
V_GS(th)
g_fs
I_DSS
I_GSS
Q_g
Q_gs
Q_gd
t_d(ON)
t_r
t_d(OFF)
t_f
V_SD
t_rr
Q_rr
C_iss
C_oss
C_rss
55
-
-
-
-
0.060
0.075
1.0
-
2.0
6.5
-
-
-
-
25
250
-
-
100
-100
-
-
15
3.7
8.5
-
-
11
133
35
66
-
-
1.3
-
-
90
200
-
520
-
140
50
Volts
W
Volts
S(1/W)
mA
nA
nC
nsec
Volts
nsec
mC
pF
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