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SHD220212 Datasheet, PDF (1/2 Pages) Sensitron – HERMETIC POWER MOSFET N-CHANNEL
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 4067, REV B
HERMETIC POWER MOSFET
N-CHANNEL
FEATURES:
• 30 Volt, 0.019 Ohm MOSFET
• Hermetically Sealed
• Add a “C” after the SHD for ceramic seals (SHDC220212)
• Surface Mount Package
SHD220212
MAXIMUM RATINGS
ALL RATINGS ARE AT T = 25°C UNLESS OTHERWISE SPECIFIED.
A
RATING
SYMBOL MIN. TYP. MAX.
UNITS
GATE TO SOURCE VOLTAGE
VGS
-
-
± 20
Volts
CONTINUOUS DRAIN CURRENT VGS = 10V, TC = 25°C
ID
VGS = 10V, TC = 100°C
-
-
13
Amps
9
PULSED DRAIN CURRENT
@ TC = 25°C
IDM
-
-
40
Amps
OPERATING AND STORAGE TEMPERATURE
TOP/TSTG
-55
-
+150
°C
THERMAL RESISTANCE JUNCTION TO CASE
RθJC
-
-
1.7
°C/W
TOTAL DEVICE DISSIPATION @ TC = 25°C
PD
-
-
75
Watts
ELECTRICAL CHARACTERISTICS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
VGS = 0V, ID = 250 μA
DRAIN TO SOURCE ON STATE RESISTANCE
GATE THRESHOLD VOLTAGE
VGS = 10V, ID = 7.3A
VGS = 4.5V, ID = 3.7A
VDS = VGS, ID = 250μA
ZERO GATE VOLTAGE DRAIN CURRENT, TJ = 25°C
(VDS = 30V, VGS = 0V), TJ = 125°C
GATE TO SOURCE LEAKAGE FORWARD VGS = 16V
GATE TO SOURCE LEAKAGE REVERSE VGS = -16V
TOTAL GATE CHARGE
VGS = 10V,
GATE TO SOURCE CHARGE
VDS = 24V,
GATE TO DRAIN CHARGE
ID = 7.3A
TURN ON DELAY TIME
VDD = 15V,
RISE TIME
ID = 7.3A,
TURN OFF DELAY TIME
RG = 6.2Ω,
FALL TIME
VGS = 10V
DIODE FORWARD VOLTAGE
TJ = 25°C, IS = 7.3A
VGS = 0V
REVERSE RECOVERY TIME
TJ = 25°C,
IS = 7.3A,
di/dt = 100A/μsec,
REVERSE RECOVERY CHARGE
VDD = 25V
INPUT CAPACITANCE
VGS = 0V, VDS = 25V,
OUTPUT CAPACITANCE
f = 1MHz
REVERSE TRANSFER CAPACITANCE
BVDSS
RDS(ON)
VGS(th)
IDSS
IGSS
Qg
Qgs
Qgd
td(ON)
tr
td(OFF)
tf
VSD
trr
Qrr
Ciss
Coss
Crss
30
-
-
-
-
0.019
0.030
1.0
-
3.0
-
-
25
250
-
-
100
-100
-
-
80
20
23
-
20
-
80
80
80
-
-
1.0
-
110
-
-
300
-
-
1640
-
660
220
Volts
Ω
Volts
μA
nA
nC
nsec
Volts
nsec
μC
pF
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