SHD219720 Datasheet, PDF (1/2 Pages) Sensitron – LOW RDS HERMETIC POWER MOSFET - P-CHANNEL

SENSITRON
SEMICONDUCTOR
SHD219720
TECHNICAL DATA
DATA SHEET 5035, REV. -
LOW R_DS HERMETIC POWER MOSFET - P-CHANNEL
FEATURES:
• 60 Volt, 0.01 Ohm, 90A MOSFET
• Isolated Hermetic Metal Package
• Ultra Low R_{DS (on)}
MAXIMUM RATINGS
ALL RATINGS ARE AT T = 25°C UNLESS OTHERWISE SPECIFIED.
C
RATING
SYMBOL MIN. TYP. MAX.
UNITS
GATE TO SOURCE VOLTAGE
V_GS
-
-
±20
Volts
ON-STATE DRAIN CURRENT
I_D25
-
-
- 55*
Amps
PULSED DRAIN CURRENT
I_DM
-
-
- 200
Amps
OPERATING AND STORAGE TEMPERATURE
T_J/T_STG
-55
-
+150
°C
TOTAL DEVICE DISSIPATION
P_D
-
-
205
Watts
THERMAL RESISTANCE, JUNCTION TO CASE
R_θJC
-
-
0.6
°C/W
Note: * current limited by package; die rating is 90A
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
DRAIN TO SOURCE BREAKDOWN VOLTAGE
V_GS = 0V, I_D = - 250µA
STATIC DRAIN TO SOURCE ON STATE RESISTANCE
V_GS = - 10V, I_D = - 30A
V_GS = - 4.5V, I_D = - 20A
GATE THRESHOLD VOLTAGE V_DS = V_GS, I_D = - 250µA
FORWARD TRANSCONDUCTANCE
V_DS = - 15V, I_D = - 50A
ZERO GATE VOLTAGE DRAIN CURRENT
V_DS = 0.8 x Max. rating, V_GS = 0V, T_J = 25°C
T_J = 125°C
GATE TO SOURCE LEAKAGE FORWARD V_GS = 20V
GATE TO SOURCE LEAKAGE REVERSE V_GS = -20V
TURN ON DELAY TIME
V_DD = - 30V
RISE TIME
I_D = - 55A
TURN OFF DELAY TIME
V_GS= - 10V
FALL TIME
R_G = 2.5Ω
DIODE FORWARD VOLTAGE
I_F = - 55A, V_GS = 0V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
REVERSE RECOVERY TIME
T_J = 25°C,
I_F= - 50A, V_R = - 30V
di/dt = - 100A/µsec
REVERSE RECOVERY CURRENT
INPUT CAPACITANCE
OUTPUT CAPACITANCE
REVERSE TRANSFER CAPACITANCE
V_GS = 0 V,
V_DS = - 25 V,
f = 1.0MHz
SYMBOL
BV_DSS
R_DS(ON)
V_GS(th)
g_fs
I_DSS
I_GSS
t_d(ON)
t_r
t_d(OFF)
t_f
V_SD
t_rr
I_rr
C_iss
C_oss
C_rss
MIN.
- 60
-
-1
20
-
-
-
-
-
-
-
TYP.
-
0.008
0.010
-
-
-
-
20
190
140
300
- 1.0
60
-3
9200
975
760
MAX.
-
0.010
0.012
-3
-
-1
- 50
100
-100
-
- 1.5
90
- 4.5
-
UNITS
Volts
Ω
Volts
S(1/Ω)
µA
nA
nsec
Volts
nsec
A
pF
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