SHD219603 Datasheet, PDF (1/2 Pages) Sensitron – HERMETIC POWER MOSFET N-CHANNEL

SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 4335, REV. -
HERMETIC POWER MOSFET
N-CHANNEL
FEATURES:
• 200 Volt, 0.045 Ohm, 50A MOSFET
• Isolated Hermetic Metal Package
• Low R_{DS (on)}
SHD219603
MAXIMUM RATINGS
ALL RATINGS ARE AT T = 25°C UNLESS OTHERWISE SPECIFIED.
C
RATING
SYMBOL MIN. TYP. MAX.
UNITS
GATE TO SOURCE VOLTAGE
V_GS
-
-
±20
Volts
ON-STATE DRAIN CURRENT
I_D25
-
-
50
Amps
PULSED DRAIN CURRENT
I_DM
-
-
200
Amps
OPERATING AND STORAGE TEMPERATURE
T_J/T_STG
-55
-
+150
°C
TOTAL DEVICE DISSIPATION
P_D
-
-
270
Watts
THERMAL RESISTANCE, JUNCTION TO CASE
R_θJC
-
-
0.45
°C/W
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
DRAIN TO SOURCE BREAKDOWN VOLTAGE
V_GS = 0V, I_D = 250µA
STATIC DRAIN TO SOURCE ON STATE RESISTANCE
V_GS = 10V, I_D = 0.5I_D25
GATE THRESHOLD VOLTAGE V_DS = V_GS, I_D = 4.0 mA
FORWARD TRANSCONDUCTANCE
V_DS = 10V, I_D = 0.5I_D25
ZERO GATE VOLTAGE DRAIN CURRENT
V_DS = 0.8 x Max. rating, V_GS = 0V, T_J = 25°C
T_J = 125°C
GATE TO SOURCE LEAKAGE FORWARD V_GS = 20V
GATE TO SOURCE LEAKAGE REVERSE V_GS = -20V
TURN ON DELAY TIME
V_DS = 0.5V•
RISE TIME
V_DSS, I_D = 0.5•I_D25
TURN OFF DELAY TIME
V_GS=10V
FALL TIME
R_G = 1.0Ω
DIODE FORWARD VOLTAGE
I_F = I_S, V_GS = 0V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
REVERSE RECOVERY TIME
T_J = 25°C,
I_F=25A, V_R = 100V
di/dt = 100A/µsec
INPUT CAPACITANCE
OUTPUT CAPACITANCE
REVERSE TRANSFER CAPACITANCE
V_GS = 0 V,
V_DS = 25 V,
f = 1.0MHz
SYMBOL
BV_DSS
R_DS(ON)
V_GS(th)
g_fs
I_DSS
I_GSS
t_d(ON)
t_r
t_d(OFF)
t_f
V_SD
t_rr
C_iss
C_oss
C_rss
MIN.
200
-
2.0
26
-
-
-
-
-
-
TYP.
-
-
-
32
-
-
18
15
72
16
-
400
4400
800
280
MAX.
-
0.045
4.0
-
200
1000
100
-100
25
20
90
25
1.5
-
-
UNITS
Volts
Ω
Volts
S(1/Ω)
µA
nA
nsec
Volts
nsec
pF
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