SHD219601 Datasheet, PDF (1/2 Pages) Sensitron – HERMETIC POWER MOSFET N-CHANNEL

SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 4334, REV. -
HERMETIC POWER MOSFET
N-CHANNEL
FEATURES:
• 100 Volt, 75A, 0.02 Ohm, MOSFET
• Isolated Hermetic Metal Package
• Fast intrinsic Rectifier
• Low R_{DS (on)}
• Low package inductance-easy to drive and protect
SHD219601
MAXIMUM RATINGS
RATING
GATE TO SOURCE VOLTAGE
ON-STATE DRAIN CURRENT @ T_C = 25°C
PULSED DRAIN CURRENT @ T_C = 25°C
OPERATING AND STORAGE TEMPERATURE
THERMAL RESISTANCE, JUNCTION TO CASE
TOTAL DEVICE DISSIPATION @ T_C = 25°C
ALL RATINGS ARE AT T = 25°C UNLESS OTHERWISE SPECIFIED.
C
SYMBOL MIN. TYP. MAX.
UNITS
V_GS
-
-
±20
Volts
I_{D (on)}
-
-
75
Amps
I_DM
-
-
300
Amps
T_OP/T_STG
-55
-
+150
°C
R_thJC
-
-
0.32
°C/W
P_D
-
-
390
Watts
ELECTRICAL CHARACTERISTICS
RATING
DRAIN TO SOURCE BREAKDOWN VOLTAGE
V_GS = 0V, I_D = 250 µA
STATIC DRAIN TO SOURCE ON STATE RESISTANCE
V_GS = 10V, I_D = 37.5A
GATE THRESHOLD VOLTAGE V_DS = V_GS, I_D = 250µA
FORWARD TRANSCONDUCTANCE
V_DS = 10V, I_D = 37.5A
ZERO GATE VOLTAGE DRAIN CURRENT
V_DS = 0.8xMax. Rating, V_GS = 0V
V_DS = 0.8xMax. Rating, V_GS = 0V, T_J = 125°C
GATE TO SOURCE LEAKAGE FORWARD V_GS = 20V
GATE TO SOURCE LEAKAGE REVERSE V_GS = -20V
TURN ON DELAY TIME
V_DS = 0.5V,
RISE TIME
I_D = 37.5A,
TURN OFF DELAY TIME
R_G = 2.0Ω,
FALL TIME
V_GS = 10V
DIODE FORWARD VOLTAGE
T_C = 25°C, I_S = 75A,
V_GS = 0V
REVERSE RECOVERY TIME
T_J = 25°C
I_F = 75A, -di/dt = 100A/µsec, V_R = 100V
INPUT CAPACITANCE
V_GS = 0 V
OUTPUT CAPACITANCE
V_DS = 25 V
REVERSE TRANSFER CAPACITANCE
f = 1.0MHz
SYMBOL
BV_DSS
R_DS(ON)
V_GS(th)
g_fs
I_DSS
I_GSS
t_d(ON)
t_r
t_d(OFF)
t_f
V_SD
t_rr
C_iss
C_oss
C_rss
MIN.
100
-
2.0
25
-
-
-
-
-
-
TYP.
-
-
-
30
-
-
-
40
60
100
30
-
300
4500
1300
550
MAX.
-
0.025
4.0
-
200
1.0
100
-100
60
110
140
60
1.75
-
-
UNITS
Volts
Ω
Volts
S(1/Ω)
µA
mA
nA
nsec
Volts
nsec
pF
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