SHD219511 Datasheet, PDF (1/3 Pages) Sensitron – HERMETIC POWER MOSFET N-CHANNEL

SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 608, REV -
HERMETIC POWER MOSFET
N-CHANNEL
FEATURES:
œ 400 Volt, 0.24 Ohm, 16A MOSFET
œ Low R_{DS (on)}
SHD219511
MAXIMUM RATINGS
ALL RATINGS ARE AT T_C = 25•C UNLESS OTHERWISE SPECIFIED.
RATING
SYMBOL MIN. TYP. MAX.
UNITS
GATE TO SOURCE VOLTAGE
V_GS
-
-
–20
Volts
ON-STATE DRAIN CURRENT
@ T_C = 25•C
I_D
-
-
16
Amps
PULSED DRAIN CURRENT
@ T_C = 25•C
I_DM
-
-
64
Amps
OPERATING AND STORAGE TEMPERATURE
T_OP/T_STG
-55
-
+150
•C
TOTAL DEVICE DISSIPATION @ T_C = 25•C
P_D
-
-
290
Watts
THERMAL RESISTANCE, JUNCTION TO CASE
R_thJC
-
-
0.43
•C/W
ELECTRICAL CHARACTERISTICS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
V_GS = 0V, I_D = 250mA
STATIC DRAIN TO SOURCE ON STATE RESISTANCE
V_GS = 10V, I_D = 8.0A
GATE THRESHOLD VOLTAGE V_DS = V_GS, I_DS = 0.25mA
FORWARD TRANSCONDUCTANCE
V_DS = 15V, I_D = 8.0A
ZERO GATE VOLTAGE DRAIN CURRENT
V_DS = 0.8xMax. Rating, V_GS = 0V
V_DS = 0.8xMax. Rating, V_GS = 0V, T_J = 125•C
GATE TO SOURCE LEAKAGE FORWARD V_GS = 20V
GATE TO SOURCE LEAKAGE REVERSE V_GS = -20V
TURN ON DELAY TIME
V_DD = 200V,
RISE TIME
I_D = 16A,
TURN OFF DELAY TIME
R_G = 6.2W,
FALL TIME
V_GS(ON) = 10V
TOTAL GATE CHARGE
I_D = 16A,
GATE TO SOURCE CHARGE
V_GS = 10V,
GATE TO DRAIN CHARGE
V_DS =0.5xMax. Rating
DIODE FORWARD VOLTAGE
T_C = 25•C, I_S = 16A,
V_GS = 0V
REVERSE RECOVERY TIME
T_J = 25•C,
I_S = 16A,
di/dt ˆ 100A/msec
INPUT CAPACITANCE
OUTPUT CAPACITANCE
REVERSE TRANSFER CAPACITANCE
V_GS = 0 V,
V_DS = 25 V,
f = 1.0MHz
BV_DSS
R_DS(ON)
V_GS(th)
g_fs
I_DSS
I_GSS
t_d(ON)
t_r
t_d(OFF)
t_f
Q_g
Q_gs
Q_gd
V_SD
t_rr
C_iss
C_oss
C_rss
400
-
-
-
-
0.24
2.0
-
4.0
8.0
-
-
-
-
250
1000
-
-
100
-100
-
29
-
62
76
57
-
66
130
-
17
-
-
31
-
-
-
1.6
-
340
-
-
2570
-
330
82
Volts
W
Volts
S(1/W)
mA
nA
nsec
nC
nC
nC
Volts
nsec
pF
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