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SHD219504 Datasheet, PDF (1/2 Pages) Sensitron – HERMETIC POWER MOSFET N-CHANNEL
SENSITRON
SEMICONDUCTOR
SHD219504
TECHNICAL DATA
DATA SHEET 607, REV A
HERMETIC POWER MOSFET
N-CHANNEL
FEATURES:
• 400 Volt, 0.3 Ohm, 9.0A MOSFET
• Low RDS (on)
• Equivalent to IRF350 Series
MAXIMUM RATINGS
ALL RATINGS ARE AT T = 25°C UNLESS OTHERWISE SPECIFIED.
C
RATING
SYMBOL MIN. TYP. MAX.
UNITS
GATE TO SOURCE VOLTAGE
VGS
-
-
±20
Volts
ON-STATE DRAIN CURRENT
@ TC = 25°C
ID
-
-
14
Amps
ON-STATE DRAIN CURRENT
@ TC = 100°C
ID
-
-
9.0
Amps
OPERATING AND STORAGE TEMPERATURE
TOP/TSTG
-55
-
+150
°C
TOTAL DEVICE DISSIPATION @ TC = 25°C
PD
-
-
347
Watts
THERMAL RESISTANCE, JUNCTION TO CASE
RthJC
-
-
0.36
°C/W
ELECTRICAL CHARACTERISTICS
CHARACTERISTIC
DRAIN TO SOURCE BREAKDOWN VOLTAGE
VGS = 0V, ID = 1.0mA
STATIC DRAIN TO SOURCE ON STATE RESISTANCE
VGS = 10V, ID = 9.0A
VGS = 10V, ID = 14A
GATE THRESHOLD VOLTAGE VDS = VGS, ID = 0.25mA
ZERO GATE VOLTAGE DRAIN CURRENT
VDS = Max. Rating, VGS = 0V
VDS = 0.8xMax. Rating, VGS = 0V, TJ = 125°C
GATE TO SOURCE LEAKAGE FORWARD VGS = 20V
GATE TO SOURCE LEAKAGE REVERSE VGS = -20V
TURN ON DELAY TIME
VDD = 200V,
RISE TIME
ID = 14A,
TURN OFF DELAY TIME
RG = 2.2Ω
FALL TIME
TOTAL GATE CHARGE
GATE TO SOURCE CHARGE
GATE TO DRAIN CHARGE
ID = 14A,
VGS = 10V,
VDS =0.5xMax. Rating
DIODE FORWARD VOLTAGE
TC = 25°C, IS = 14A,
VGS = 0V
REVERSE RECOVERY CHARGE
TJ = 25°C,
di/dt = 100A/μsec, VDD = 50V
REVERSE RECOVERY TIME
TJ = 25°C,
IF = 14A,
di/dt = 100A/μsec, VDD = 50V
INPUT CAPACITANCE
VGS = 0 V
OUTPUT CAPACITANCE
VDS = 25 V
REVERSE TRANSFER CAPACITANCE f = 1.0MHz
SYMBOL
BVDSS
RDS(ON)
VGS(th)
IDSS
IGSS
td(ON)
tr
td(OFF)
tf
Qg
Qgs
Qgd
VSD
QRR
trr
Ciss
Coss
Crss
MIN.
400
-
2.0
-
-
-
52
5.0
25
-
-
-
-
TYP.
-
-
-
-
-
-
-
-
-
-
-
-
2600
680
250
MAX.
-
0.3
0.4
4.0
250
1000
100
-100
35
190
170
130
110
18
65
1.7
11
1200
-
UNITS
Volts
Ω
Volts
μA
nA
nsec
nC
nC
nC
Volts
μC
nsec
pF
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