SHD219503 Datasheet, PDF (1/3 Pages) Sensitron – HERMETIC POWER MOSFET N-CHANNEL

SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 896, REV -
SHD219503
HERMETIC POWER MOSFET
N-CHANNEL
DESCRIPTION: A 200 VOLT, .100 OHM MOSFET IN A HERMETIC CERAMIC LCC-3P PACKAGE.
MAXIMUM RATINGS
ALL RATINGS ARE AT T_A = 25•C UNLESS OTHERWISE SPECIFIED.
RATING
SYMBOL MIN. TYP. MAX.
UNITS
GATE TO SOURCE VOLTAGE
V_GS
-
-
–20
Volts
CONTINUOUS DRAIN CURRENT
@ T_C = 25•C
I_D
-
-
27.4
Amps
PULSED DRAIN CURRENT
@ T_C = 25•C
I_DM
-
-
120 Amps(pk)
OPERATING AND STORAGE TEMPERATURE
T_OP/T_STG
-55
-
+150
•C
TERMAL RESISTANCE JUNCTION TO CASE
R¡ _JC
-
-
0.36
•C/W
TOTAL DEVICE DISSIPATION @ T_C = 25•C
P_D
-
-
345
Watts
ELECTRICAL CHARACTERISTICS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
BV_DSS
200
-
-
Volts
V_GS = 0V, I_D = 1.0mA
GATE THRESHOLD VOLTAGE V_DS = V_GS, I_D = 250mA VGS(TH)
2.0
-
4.0
DRAIN TO SOURCE ON STATE RESISTANCE
V_GS = 10Vdc, I_D = 17A
R_DS(ON)
-
-
0.10
W
PULSE TEST, t ˆ 300 ms, DUTY CYCLE d ˆ 2%
ZERO GATE VOLTAGE DRAIN CURRENT
-
-
V_DS = 0.8xMax. Rating, V_GS = 0Vdc
I_DSS
25
mA
V_DS = 0.8xMax. Rating
V_GS = 0Vdc, T_J = 125•C
250
GATE TO BODY LEAKAGE CURRENT V_GS = –20Vdc,
I_GSS
-
-
–100
nA
TOTAL GATE CHARGE
GATE TO SOURCE CHARGE
GATE TO DRAIN CHARGE
V_GS = 10 Vdc
V_DS = 0.5V Max. Rating,
I_D = 27.4A
TURN ON DELAY TIME
RISE TIME
V_DD = 100V,
I_D = 27.4A,
TURN OFF DELAY TIME
FALL TIME
R_G = 6.2W
FORWARD VOLTAGE
I_F = 27.5A, V_GS = 0V
PULSE TEST, t ˆ 300 ms, DUTY CYCLE d ˆ 2%
REVERSE RECOVERY TIME
I_F = 25A
REVERSE RECOVERY CHARGE
di/dt = 100A/msec
V_DD ˆ 50V
INPUT CAPACITANCE
OUTPUT CAPACITANCE
REVERSE TRANSFER CAPACITANCE
V_DS = 25 Vdc,
V_GS = 0 Vdc,
f = 1 MHz
Q_g
Q_gs
Q_gd
t_d(ON)
t_r
t_d(OFF)
t_f
V_SD
t_rr
Q_rr
C_iss
C_oss
C_rss
55
-
115
8
22
30
60
-
-
35
190
170
130
-
-
1.9
-
-
950
-
3.8
-
-
3500
-
700
110
nC
nsec
Volts
nsec
mC
pF
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