SHD219501 Datasheet, PDF (1/3 Pages) Sensitron – HERMETIC POWER MOSFET N-CHANNEL

SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 778, REV. -
SHD219501
HERMETIC POWER MOSFET
N-CHANNEL
FEATURES:
œ 60 Volt, 0.020 Ohm, 55A MOSFET
œ Isolated Hermetic Ceramic Package
œ Fast Switching
œ Low R_{DS (on)}
œ Equivalent to IRFN054
MAXIMUM RATINGS
ALL RATINGS ARE AT T_C = 25•C UNLESS OTHERWISE SPECIFIED.
RATING
SYMBOL MIN. TYP. MAX.
UNITS
GATE TO SOURCE VOLTAGE
V_GS
-
-
–20
Volts
ON-STATE DRAIN CURRENT
V_GS = 10V
@ T_C = 25•C
I_D
@ T_C = 100•C
-
-
55
Amps
-
-
40
PULSED DRAIN CURRENT
@ T_C = 25•C
I_DM
-
-
256
Amps
OPERATING AND STORAGE TEMPERATURE
T_OP/T_STG
-55
-
+150
•C
THERMAL RESISTANCE, JUNCTION TO CASE
R¡ _hJC
-
-
0.36
•C/W
TOTAL DEVICE DISSIPATION @ T_C = 25•C
P_D
-
-
348
Watts
ELECTRICAL CHARACTERISTICS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
V_GS = 0V, I_D = 1.0mA
STATIC DRAIN TO SOURCE ON STATE RESISTANCE
V_GS = 10V, I_D = 40A
GATE THRESHOLD VOLTAGE V_DS = V_GS, I_D = 250mA
FORWARD TRANSCONDUCTANCE
V_DS ˜ 15V, I_DS = 40A
ZERO GATE VOLTAGE DRAIN CURRENT
V_DS = 0.8xMax. Rating, V_GS = 0V
V_DS = 0.8xMax. Rating, V_GS = 0V, T_J = 125•C
GATE TO SOURCE LEAKAGE FORWARD V_GS = 20V
GATE TO SOURCE LEAKAGE REVERSE V_GS = -20V
TURN ON DELAY TIME
V_DD = 30V,
RISE TIME
I_D = 55A,
TURN OFF DELAY TIME
R_G = 2.35W,
FALL TIME
V_GS = 10V
DIODE FORWARD VOLTAGE
T_C = 25•C, I_S = 35A,
V_GS = 0V
REVERSE RECOVERY TIME
T_J = 25•C,
I_F = 55A,
di/dt ˆ 100A/msec, V_DD ˆ 50V
INPUT CAPACITANCE
V_GS = 0 V
OUTPUT CAPACITANCE
V_DS = 25 V
REVERSE TRANSFER CAPACITANCE f = 1.0MHz
BV_DSS
R_DS(ON)
V_GS(th)
g_fs
I_DSS
I_GSS
t_d(ON)
t_r
t_d(OFF)
t_f
V_SD
t_rr
C_iss
C_oss
C_rss
60
-
-
-
-
0.02
2.0
-
4.0
20
-
-
-
-
25
250
-
-
100
-100
-
-
33
180
100
100
-
-
2.5
-
-
280
-
1600
-
2000
340
Volts
W
Volts
S(1/W)
mA
nA
nsec
Volts
nsec
pF
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