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SHD219451_08 Datasheet, PDF (1/3 Pages) Sensitron – HERMETIC POWER MOSFET P-CHANNEL
SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 338, REV C
HERMETIC POWER MOSFET
P-CHANNEL
FEATURES:
• 55 Volt, 0.024, Ohm MOSFET
• Isolated and Hermetically Sealed
• Surface Mount Package
SHD219451
MAXIMUM RATINGS
ALL RATINGS ARE AT T = 25°C UNLESS OTHERWISE SPECIFIED.
A
RATING
SYMBOL MIN. TYP. MAX.
UNITS
GATE TO SOURCE VOLTAGE
VGS
-
-
±20
Volts
CONTINUOUS DRAIN CURRENT VGS = -10V, TC = 25°C
ID
VGS = -10V, TC = 100°C
PULSED DRAIN CURRENT
@ TC = 25°C
IDM
-
-
-74
Amps
-52
-
-
-260
Amps
OPERATING AND STORAGE TEMPERATURE
TOP/TSTG
-55
-
+175
°C
TERMAL RESISTANCE JUNCTION TO CASE
TOTAL DEVICE DISSIPATION @ TC = 25°C
RθJC
-
-
0.75
°C/W
PD
-
-
200
Watts
ELECTRICAL CHARACTERISTICS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
VGS = 0V, ID = -1.0mA
DRAIN TO SOURCE ON STATE RESISTANCE
VGS = 10V, ID = -38A
VGS = 10V, ID = -38A, TC = 125°C
GATE THRESHOLD VOLTAGE VDS = VGS, ID = -250µA
FORWARD TRANSCONDUCTANCE
VDS ≥ 10V, ID = -38A
ZERO GATE VOLTAGE DRAIN CURRENT, TJ = 25°C
(VDS = -44V, VGS = 0V), TJ = 125°C
GATE TO SOURCE LEAKAGE FORWARD VGS = 20V
GATE TO SOURCE LEAKAGE REVERSE VGS = -20V
TOTAL GATE CHARGE
VGS = -10V,
GATE TO SOURCE CHARGE
VDS = -44V,
GATE TO DRAIN CHARGE
ID = 5.5A
TURN ON DELAY TIME
VDD = -28V,
RISE TIME
ID = -38A,
TURN OFF DELAY TIME
RG = 2.5Ω,
FALL TIME
VGS ≥ 10V
DIODE FORWARD VOLTAGE
TJ = 25°C,IS = -38V
VGS = 0V
REVERSE RECOVERY TIME
TJ = 25°C,
IS = -10A,
di/dt ≤ = -100A/µsec,
REVERSE RECOVERY CHARGE
VDD ≤ 30V
INPUT CAPACITANCE
VGS = 0V, VDS = 25V,
OUTPUT CAPACITANCE
f = 1.0MHz
REVERSE TRANSFER CAPACITANCE
BVDSS
RDS(ON)
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(ON)
tr
td(OFF)
tf
VSD
trr
Qrr
Ciss
Coss
Crss
-50
-
-
-
-
0.024
0.042
2.0
-
4.0
21
-
-
-
-
25
250
-
-
100
-100
-
-
180
32
86
-
18
-
99
61
96
-
-
1.4
-
130
-
-
350
-
-
3400
-
1400
640
Volts
Ω
Volts
S(1/Ω)
µA
nA
nC
nsec
Volts
nsec
µC
pF
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