SHD219451 Datasheet, PDF (1/3 Pages) Sensitron – HERMETIC POWER MOSFET P-CHANNEL

SENSITRON
SEMICONDUCTOR
TECHNICAL DATA
DATA SHEET 338, REV B
HERMETIC POWER MOSFET
P-CHANNEL
FEATURES:
œ 55 Volt, 0.02, Ohm MOSFET
œ Isolated and Hermetically Sealed
œ Surface Mount Package
SHD219451
MAXIMUM RATINGS
ALL RATINGS ARE AT T_A = 25•C UNLESS OTHERWISE SPECIFIED.
RATING
SYMBOL MIN. TYP. MAX.
UNITS
GATE TO SOURCE VOLTAGE
V_GS
-
-
–20
Volts
CONTINUOUS DRAIN CURRENT V_GS = -10V, T_C = 25•C
I_D
V_GS = -10V, T_C = 100•C
-
-
-74
Amps
-52
PULSED DRAIN CURRENT
@ T_C = 25•C
I_DM
-
-
-260
Amps
OPERATING AND STORAGE TEMPERATURE
T_OP/T_STG
-55
-
+175
•C
TERMAL RESISTANCE JUNCTION TO CASE
R¡ _JC
-
-
0.75
•C/W
TOTAL DEVICE DISSIPATION @ T_C = 25•C
P_D
-
-
200
Watts
ELECTRICAL CHARACTERISTICS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
V_GS = 0V, I_D = -1.0mA
DRAIN TO SOURCE ON STATE RESISTANCE
V_GS = 10V, I_D = -38A
V_GS = 10V, I_D = -38A, T_C = 125•C
GATE THRESHOLD VOLTAGE V_DS = V_GS, I_D = -250mA
FORWARD TRANSCONDUCTANCE
V_DS ˜ 10V, I_D = -38A
ZERO GATE VOLTAGE DRAIN CURRENT, T_J = 25•C
(V_DS = -44V, V_GS = 0V), T_J = 125•C
GATE TO SOURCE LEAKAGE FORWARD V_GS = 20V
GATE TO SOURCE LEAKAGE REVERSE V_GS = -20V
TOTAL GATE CHARGE
V_GS = -10V,
GATE TO SOURCE CHARGE
V_DS = -44V,
GATE TO DRAIN CHARGE
I_D = 5.5A
TURN ON DELAY TIME
V_DD = -28V,
RISE TIME
I_D = -38A,
TURN OFF DELAY TIME
R_G = 2.5W,
FALL TIME
V_GS ˜ 10V
DIODE FORWARD VOLTAGE
T_J = 25•C,I_S = -38V
V_GS = 0V
REVERSE RECOVERY TIME
T_J = 25•C,
I_S = -10A,
di/dt ˆ = -100A/msec,
REVERSE RECOVERY CHARGE
V_DD ˆ 50V
INPUT CAPACITANCE
V_GS = 0V, V_DS = 25V,
OUTPUT CAPACITANCE
f = 1.0MHz
REVERSE TRANSFER CAPACITANCE
BV_DSS
R_DS(ON)
V_GS(th)
g_fs
I_DSS
I_GSS
Q_g
Q_gs
Q_gd
t_d(ON)
t_r
t_d(OFF)
t_f
V_SD
t_rr
Q_rr
C_iss
C_oss
C_rss
-50
-
-
-
-
0.02
0.035
2.0
-
4.0
21
-
-
-
-
25
250
-
-
100
-100
-
-
180
32
86
-
18
-
99
61
96
-
-
1.6
-
-
130
350
-
3400
-
1400
640
Volts
W
Volts
S(1/W)
mA
nA
nC
nsec
Volts
nsec
mC
pF
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