SHD219403 Datasheet, PDF (1/3 Pages) Sensitron – HERMETIC POWER MOSFET N-CHANNEL

SENSITRON
SEMICONDUCTOR
SHD219403
TECHNICAL DATA
DATA SHEET 893, REV. -
HERMETIC POWER MOSFET
N-CHANNEL
FEATURES:
œ 200 Volt, 0.21 Ohm, 14A MOSFET
œ Ceramic Hermetic Package
œ Fast Switching
œ Low R_{DS (on)}
œ Electrically Equivalent to IRFY240
MAXIMUM RATINGS
RATING
ALL RATINGS ARE AT T_C = 25•C UNLESS OTHERWISE SPECIFIED.
SYMBOL MIN. TYP. MAX.
UNITS
GATE TO SOURCE VOLTAGE
V_GS
-
-
–20
Volts
ON-STATE DRAIN CURRENT V_DS ˜ 2V_DS(on), V_GS = 10V
I_{D (on)}
-
-
14
Amps
PULSED DRAIN CURRENT
@ T_C = 25•C
I_DM
-
-
–56
Amps
OPERATING AND STORAGE TEMPERATURE
T_OP/T_STG
-55
-
+150
•C
THERMAL RESISTANCE, JUNCTION TO CASE
R¡ _JC
-
-
0.72
•C/W
TOTAL DEVICE DISSIPATION @ T_C = 25•C
P_D
-
-
175
Watts
ELECTRICAL CHARACTERISTICS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
V_GS = 0V, I_D = 250 mA
DRAIN TO SOURCE ON-STATE VOLTAGE
V_GS = 10V, I_D = 10A
STATIC DRAIN TO SOURCE ON STATE RESISTANCE
V_GS = 10V, I_D = 10A
V_GS = 10V, I_D = 10A, T_C = 125•C
GATE THRESHOLD VOLTAGE V_DS = V_GS, I_D = 250mA
FORWARD TRANSCONDUCTANCE
V_DS ˜ 2V_DS(on), I_D = 10A
ZERO GATE VOLTAGE DRAIN CURRENT
V_DS = 0.8xMax. Rating, V_GS = 0V
V_DS = 0.8xMax. Rating, V_GS = 0V, T_C = 125•C
GATE TO SOURCE LEAKAGE FORWARD V_GS = 20V
GATE TO SOURCE LEAKAGE REVERSE V_GS = -20V
TURN ON DELAY TIME
V_DD = 100V,
RISE TIME
I_D =14A,
TURN OFF DELAY TIME
R_G = 5.0W,
FALL TIME
V_GS = 10V
DIODE FORWARD VOLTAGE
REVERSE RECOVERY TIME
T_C = 25•C, I_S = 14A,
V_GS = 0V
I_f = I_S,
di_F/ds = 100A/msec,
INPUT CAPACITANCE
V_GS = 0 V
OUTPUT CAPACITANCE
V_DS = 25 V
REVERSE TRANSFER CAPACITANCE f = 1.0MHz
BV_DSS
V_DS(ON)
R_DS(ON)
V_GS(th)
g_fs
I_DSS
I_GSS
t_d(ON)
t_r
t_d(OFF)
t_f
V_SD
t_rr
C_iss
C_oss
C_rss
200
-
-
-
1.8
2.1
-
-
0.21
0.40
2.0
-
4.0
6.0
-
-
-
0.1
0.25
0.2
1.0
-
-
100
-100
-
17
-
52
36
30
-
-
1.5
-
-
500
-
1300
-
400
130
Volts
Volts
W
Volts
S(1/W)
mA
nA
nsec
Volts
nsec
pF
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