SHD219401 Datasheet, PDF (1/3 Pages) Sensitron – HERMETIC POWER MOSFET N-CHANNEL

SENSITRON
SEMICONDUCTOR
SHD219401
TECHNICAL DATA
DATA SHEET 850, REV. -
HERMETIC POWER MOSFET
N-CHANNEL
FEATURES:
œ 60 Volt, 0.035 Ohm, 20A MOSFET
œ Hermetic Surface Mount Package
œ Fast Switching
œ Low R_{DS (on)}
œ Electricly Equivalent to IRFY044 Series
MAXIMUM RATINGS
ALL RATINGS ARE AT T_C = 25•C UNLESS OTHERWISE SPECIFIED.
RATING
SYMBOL MIN. TYP. MAX.
UNITS
GATE TO SOURCE VOLTAGE
V_GS
-
-
–20
Volts
ON-STATE DRAIN CURRENT
@ T_C = 25•C
I_D
-
-
20
Amps
PULSED DRAIN CURRENT
@ T_C = 25•C
I_DM
-
-
128
Amps
OPERATING AND STORAGE TEMPERATURE
T_OP/T_STG
-55
-
+150
•C
THERMAL RESISTANCE, JUNCTION TO CASE
R_thJC
-
-
0.65
•C/W
TOTAL DEVICE DISSIPATION
@ T_C = 25•C
P_D
-
-
80
Watts
ELECTRICAL CHARACTERISTICS
DRAIN TO SOURCE BREAKDOWN VOLTAGE
TOTAL GATE CHARGE
V_GS = 0V, I_D = 1.0mA
V_GS = 10V, I_D = 20A, V_DS = 0.5 x V_DS Max.
GATE TO SOURCE ON-STATE VOLTAGE
V_GS = 10V, I_D = 20A, V_DS = 0.5 x V_DS Max.
GATE DRAIN CHARGE
V_GS = 10V, I_D = 20A, V_DS = 0.5 x V_DS Max.
STATIC DRAIN TO SOURCE ON STATE RESISTANCE
V_GS = 10V, I_D = 10A
GATE THRESHOLD VOLTAGE V_DS = V_GS, I_D = 250mA
FORWARD TRANSCONDUCTANCE
V_DS ˜ 15V, I_D = 20A
ZERO GATE VOLTAGE DRAIN CURRENT
V_DS = 0.8xMax. Rating, V_GS = 0V
V_DS = 0.8xMax. Rating, V_GS = 0V, T_J = 125•C
GATE TO SOURCE LEAKAGE FORWARD V_GS = 20V
GATE TO SOURCE LEAKAGE REVERSE V_GS = -20V
TURN ON DELAY TIME
V_DD = 30V,
RISE TIME
I_D =20A,
TURN OFF DELAY TIME
R_G = 9.1W,
FALL TIME
V_GS = 10V
DIODE FORWARD VOLTAGE
T_C = 25•C, I_S = 20A,
V_GS = 0V
REVERSE RECOVERY TIME
T_J = 25•C,
I_S = 20A, di/ds ˆ 100A/msec,
V_DD ˆ 50V
INPUT CAPACITANCE
V_GS = 0 V
OUTPUT CAPACITANCE
V_DS = 25 V
REVERSE TRANSFER CAPACITANCE f = 1.0MHz
BV_DSS
Q_g
Q_gs
Q_gd
R_DS(ON)
V_GS(th)
g_fs
I_DSS
I_GSS
t_d(ON)
t_r
t_d(OFF)
t_f
V_SD
t_rr
C_iss
C_oss
C_rss
60
-
-
29
-
88
6.7
-
15
18
-
52
-
-
0.040
2.0
-
4.0
17
-
-
-
-
25
250
-
-
100
-100
-
-
23
130
81
79
-
-
2.5
-
-
220
-
2400
-
1100
230
Volts
nC
nC
nC
W
Volts
S(1/W)
mA
nA
nsec
Volts
nsec
pF
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